Photolithography mask optimization design method and system
A photolithography mask and optimization design technology, applied in optics, originals for optomechanical processing, instruments, etc., can solve the problems of complicated design process, high cost, long time consumption, etc., to save design time and cost, The effect of high accuracy and simplified design steps
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Embodiment 1
[0073] see figure 1 , the present invention provides a photolithography mask optimization design method, the photolithography mask optimization design method includes the following steps:
[0074] 1) Perform light source optimization, mask optimization, and light source-mask optimization in sequence according to the parameters required for lithography;
[0075] 2) Setting the exposure parameters according to the optimization results;
[0076] 3) Correcting the exposure parameters according to the critical dimensions of the device;
[0077] 4) Outputting the photolithographic mask model according to the corrected exposure parameters,
[0078] 5) performing optical proximity correction on the photolithography mask model; and,
[0079] 6) Carrying out an electrical verification test on the photolithography mask model after the optical proximity correction, and obtaining the required photolithography mask after the electrical verification test is passed.
[0080] As an example...
Embodiment 2
[0110] see Figure 5 , the present invention also provides a lithography mask optimization design system 2, the lithography mask optimization design system 2 is used to implement the lithography mask optimization design method as described in the first embodiment, the lithography mask Film optimization design system 2 includes: light source optimization module 20, mask optimization module 21, light source-mask optimization module 22, exposure parameter setting module 23, data storage module 24, correction module 25, model output module 26, optical proximity correction Module 27 and verification detection module 28; wherein, the light source optimization module 20 is used to optimize the light source according to the parameter conditions required by lithography; the mask optimization module 21 is used to perform mask optimization according to the parameter conditions required by lithography; The light source-mask optimization module 22 is connected to the light source optimizat...
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