Microdisk resonator based on bp material and its fabrication method and application in phototransistor
A phototransistor, microdisk resonator technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as few research reports on BP-microdisk resonators
Active Publication Date: 2021-01-05
XIDIAN UNIV
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Problems solved by technology
However, the reported resonance wavelengths of optical microcavities based on BP materials are around the visible range, and there are few reports on BP-microdisk resonators in the near-infrared range.
Method used
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Embodiment
[0031] Embodiment: Fabricate a microdisk resonator based on BP material.
[0032] refer to figure 2 , the implementation steps of this example are as follows:
[0033] Step 1: Growing an Optoelectronic Nanocavity
[0034] Using the electron beam lithography process, grow Si material on the SOI platform layer 5 to form an optoelectronic nanocavity 2, such as figure 2 (a). The optoelectronic nanocavity 2 has a radius of 2 micrometers and a height of 210 nanometers.
[0035] Step 2: Growing Absorbent Layer
[0036] Using chemical vapor deposition process, red phosphorus was used as evaporation source, tin (Sn) and tin tetraiodide (SnI4) were used as mineralizers on the space loss layer, and BP was grown under the condition of maintaining the pressure at 27.2 atmospheres. material, forming the absorbing layer, the thickness of black phosphorus is 5.5nm, such as figure 2 (b).
[0037] The chemical vapor deposition process in this step, referring to Joshua Smith, Daniel He...
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Abstract
The invention discloses a BP material-based micro disc resonator. The BP material-based micro disc resonator comprises an absorption layer, a photoelectric nanometer cavity, a bus waveguide, a source-drain-gate electrode and an SOI platform layer, wherein the absorption layer, the photoelectric nanometer cavity, the bus waveguide and the source-drain-gate electrode are sequentially arranged on theSOI platform layer, the BP material-based micro disc resonator is characterized in that the absorption layer employs two-dimensional material black phosphorus, the photoelectric nanometer cavity employs a Si material, the bus waveguide employs a Si material, and the source-drain-gate electrode employs a metal Au material. Traditional WGM formed in a micro disc is combined with improvement of mutual effect of a BP light substance, and the resonance wavelength can be within a near-infrared range; and by employing a coupling die theory, the mutual effect of a BP cavity system and a Si micro discresonant cavity can be analyzed, and the development of a new near-infrared ray (NIR) BP photoelectric device combined with an optical micro resonator is favorably pushed.
Description
technical field [0001] The invention belongs to the technical field of optoelectronic devices, in particular to a microdisk resonator, in particular to a microdisk resonator based on BP material. Background technique [0002] Currently, there are many studies on the unique layered structure and tunable optical properties of two-dimensional (2D) materials. The anisotropic crystal structure makes black phosphorus attractive compared to other 2D materials including graphene, transition metal chalcogenides (TMDCs). In addition to the unique crystal structure, the thickness-dependent bandgap of BP (0.3 eV to 2 eV) can be tuned wider than other 2D materials. The bandgap of BP bridges the gap between graphene and TMDS, which corresponds to most of the near-infrared and part of the visible range. Due to these unique properties, black phosphorus has a high hole mobility (10cm2 / (V s) ~ 1000cm2 / (V s)) and a high current conversion rate of 100 ~ 10000, because black phosphorus has a b...
Claims
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IPC IPC(8): H01L29/06H01L29/12H01L29/78
Inventor 刘艳张思清阚杨若颖
Owner XIDIAN UNIV