Normally-on terahertz metasurface modulator driven by low voltage and preparation method thereof

A metasurface, normally open technology, applied in the field of terahertz wave applications, can solve the problems of inability to integrate microelectronic systems, etc., and achieve the effects of reducing terahertz wave loss, easy access, and low cost

Active Publication Date: 2020-08-28
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, conventional thermal and optical actuation methods require additional thermal and optical devices, which cannot be integrated with current mainstream microelectronic systems

Method used

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  • Normally-on terahertz metasurface modulator driven by low voltage and preparation method thereof
  • Normally-on terahertz metasurface modulator driven by low voltage and preparation method thereof
  • Normally-on terahertz metasurface modulator driven by low voltage and preparation method thereof

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Embodiment Construction

[0042] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0043] A normally-on terahertz metasurface modulator driven by low voltage, including a high-resistance silicon substrate 1, a buried gate electrode 2, a vanadium dioxide film, and a supersurface layer microstructure 4. The buried gate electrode 2 is formed by a diffusion process. The high-resistance silicon substrate 1 is prepared by selective doping and formed inside the high-resistance silicon substrate 1. The upper surface of the h...

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Abstract

The invention provides a low-voltage-driven normally-on terahertz metasurface modulator and a preparation method thereof, including a high-resistance silicon substrate, a buried gate electrode, a vanadium dioxide film and a microstructure of the supersurface layer, and a high-resistance silicon substrate surface The upper side is vanadium dioxide film and supersurface layer microstructure in turn; vanadium dioxide film includes square vanadium dioxide film block and isolated vanadium dioxide film, and the supersurface layer microstructure is composed of several metal structural units arranged periodically, each The first metal structure unit is a square metal block, an H-shaped groove is arranged in the middle of each square metal block, and a square vanadium dioxide film block is arranged under the horizontal section in the middle of the H-shaped groove, and the bottom of each square metal block is passed through the metal The bar is connected, and finally connected to the drain electrode. The device can be widely used in terahertz wave communication systems, terahertz wave detection, terahertz wave imaging and other fields.

Description

technical field [0001] The invention belongs to the technical field of terahertz wave application, in particular to a low-voltage-driven normally-on terahertz metasurface modulator and a preparation method thereof. Background technique [0002] Terahertz wave is between microwave and infrared, and its special frequency range makes terahertz wave have some unique properties. It has great application prospects in the fields of wireless communication, spectroscopy, nondestructive testing and imaging, etc. Much attention. The realization of these potential applications requires a variety of active and passive components to more effectively control terahertz waves, such as modulators, filters, polarizers, phase shifters, switches, and lenses. However, the electromagnetic properties of most natural materials are not suitable for the terahertz frequency range, so the development of terahertz components is relatively backward, and the emergence of artificial electromagnetic materia...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/01H01L21/77
Inventor 文岐业唐亚华张岱南何雨莲杨青慧陈智张怀武沈仕远
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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