Formation method of semiconductor device structure
A device structure, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of increasing the complexity of integrated circuit (IC) processing and manufacturing, continuous difficulty in process, etc.
Pending Publication Date: 2019-05-28
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology
[0004] However, such developments have increased the complexity of the processing and fabrication of integrated circuits (ICs)
Processes continue to become more difficult as part feature sizes continue to shrink
Therefore, it is a challenge to form reliable semiconductor devices in smaller and smaller sizes
Method used
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Embodiment Construction
[0038] The following content provides many different embodiments or examples for implementing different components of the embodiments of the present invention. Specific embodiments, or examples, of components and configurations are described below to simplify embodiments of the invention. Of course, these are just examples, not intended to limit the embodiments of the present invention. For example, if a description mentions that a first component is formed on a second component, it may include an embodiment where the first and second components are in direct contact, or an additional component may be formed between the first and second components. between, such that the first and second components are not in direct contact with each other. In addition, the embodiments of the present invention may repeat element symbols and / or letters in many examples. These repetitions are for the purposes of simplicity and clarity and do not in themselves imply a specific relationship betw...
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A structure and a method of a semiconductor device structure are provided. The method includes forming a first fin structure, a second fin structure, and a third fin structure over a semiconductor substrate. The method includes forming first spacer elements over sidewalls of the first fin structure and the second fin structure and partially removing the first fin structure and the second fin structure. The method includes forming second spacer elements over sidewalls of the third fin structure and partially removing the third fin structure. The second spacer element is taller than the first spacer element. The method includes epitaxially growing a semiconductor material over the first fin structure, the second fin structure, and the third fin structure such that a merged semiconductor element is formed on the first fin structure and the second fin structure, and an isolated semiconductor element is formed on the third fin structure.
Description
technical field [0001] Embodiments of the present invention relate to a semiconductor device structure and a forming method thereof, in particular to a semiconductor device structure having a Fin Field Effect Transistor (FinFET) and a forming method thereof. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological developments in the materials and design of integrated circuits (ICs) have created generations of integrated circuits (ICs), each generation having smaller and more complex circuits than the previous generation. [0003] During the evolution of integrated circuits (ICs), functional density (ie, the number of interconnected devices per chip area) has generally increased while geometry size (ie, the smallest component (or line) that can be produced using a manufacturing process) has decreased. Such downscaling processes typically provide benefits through increased production efficiency and reduced a...
Claims
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IPC IPC(8): H01L29/78H01L21/336H01L21/768
CPCH01L21/823418H01L21/823468H01L21/823431H01L29/66795H01L29/0847H01L21/31116H01L21/31144H01L21/3065H01L27/0886
Inventor 耿文骏林祐宽杨昌达王屏薇
Owner TAIWAN SEMICON MFG CO LTD