Magnetron assembly, magnetron sputtering chamber and semiconductor processing device

A magnetron sputtering and magnetron technology, applied in magnetron, sputtering coating, metal material coating process, etc. Poor uniformity and other problems, to achieve the effect of compensating for poor sputtering degree and improving sputtering uniformity

Active Publication Date: 2019-06-04
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the existing magnetron assembly has the following problems: the center area of ​​the target is mor

Method used

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  • Magnetron assembly, magnetron sputtering chamber and semiconductor processing device
  • Magnetron assembly, magnetron sputtering chamber and semiconductor processing device
  • Magnetron assembly, magnetron sputtering chamber and semiconductor processing device

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] figure 1 The bottom view of the magnetron assembly provided for the embodiment of the present invention; figure 2 for figure 1 Front view of the magnetron assembly shown in application. Please also refer to Figure 1~2 , The magnetron assembly provided by the embodiment of the present invention includes: a rotating mechanism 20 , a first magnetron 21 , a first rotating arm 22 , a second magnetron 23 , a second rotating arm 24 and a rotating shaft 25 . Wherein, the rotating mechanism 20 is used to rotate along its central axis 201 under the driving of the driving mechanism; the first magnetron 21 is fixedly connected with the rotating mechanism 20 through the first rotating arm 22, so as to drive the first The magnetron 21 rotates around the central axis 201; the second magnetron 23 is fixedly connected with the second rotating arm 24, and the second rotating arm 24 is connected with the rotating mechanism 20 through the rotating shaft 25, so as to drive the second r...

Embodiment 2

[0035] An embodiment of the present invention also provides a magnetron sputtering chamber, including a magnetron assembly, and the magnetron assembly adopts the magnetron assembly provided in Embodiment 1 above.

[0036] The magnetron sputtering chamber provided in the embodiment of the present invention adopts the magnetron assembly provided in Embodiment 1 of the present invention, so the utilization rate of the target material and the process quality of the thin film can be improved.

Embodiment 3

[0038] An embodiment of the present invention provides a semiconductor processing device, including: the magnetron sputtering chamber provided in Embodiment 2 above.

[0039] The semiconductor processing equipment provided in the embodiment of the present invention adopts the magnetron sputtering chamber provided in the above-mentioned embodiment 2, so the utilization rate of the target material and the process quality of the thin film can be improved.

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Abstract

The invention provides a magnetron assembly which comprises a rotating mechanism for rotating along a central axis of a driving mechanism under the driving of the driving mechanism, a first magnetronwhich is fixedly connected to the rotating mechanism by a first rotating arm and is driven to rotate around the central axis when the rotating mechanism rotates, and a second magnetron which is fixedly connected to a second rotating arm which is connected to the rotating mechanism through a rotating shaft and is used for driving the second magnetron to rotate around the central shaft when the rotating mechanism rotates, the rotating shaft can rotate and is used for driving the magnetron to rotate around the axis of the rotating shaft. The invention also provides a magnetron sputtering chamberand a semiconductor processing device. The sputtering uniformity of a target can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor processing equipment, and in particular relates to a magnetron assembly, a magnetron sputtering chamber and semiconductor processing equipment. Background technique [0002] Magnetron sputtering technology introduces a magnetic field on the surface of the target cathode, and uses the magnetic field to confine charged particles to increase the plasma density to increase the sputtering rate. The working principle of magnetron sputtering is: electrons collide with argon atoms in the process gas during the process of flying to the substrate under the action of the electric field in the chamber, and the ionization generates Ar positive ions and new electrons; the new electrons fly to the substrate, Ar ions are accelerated to the cathode target under the action of an electric field, and bombard the target surface with high energy to cause sputtering of the target. Among the sputtered particles, ne...

Claims

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Application Information

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IPC IPC(8): H01J25/52C23C14/35
Inventor 宿晓敖侯珏赵崇军兰玥
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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