Textured-grain-powder metallurgy tantalum sputter target

A sputtering target and grain technology, applied in the field of tantalum sputtering targets, can solve the problem of not providing grain orientation or control.

Inactive Publication Date: 2007-06-13
PRAXAIR TECH INC
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, controlling the (222) and (200) orientations alone will not provide the necessary grain orientation or control needed for the most stringent sputtering applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Textured-grain-powder metallurgy tantalum sputter target

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0017] The following table summarizes the test results of preliminary tests conducted on a Model 603 batch sputtering system manufactured by MRC with a 4" (10 cm) diameter target. Sputtering tests in this system were conducted under the following conditions , i.e. 640 watts of power up to 15 kWh, wafer scan speed of 16 cm / min - corresponding to a film thickness of 1000 Angstroms, chamber pressure of 10 mTorr and target-wafer spacing of 2.0 inches (5.1 cm ). Sheet resistance was measured at 9 points on a silicon dioxide wafer with a diameter of 75 mm excluding the 6 mm edge.

[0018] For purposes of this specification, lettered targets represent comparative examples and numbered targets represent inventive examples. Although the sputtering conditions were not optimized, all experiments were carried out under the same conditions and thus allowed comparison between a cast and thermomechanically processed reference target (Target A) and a variety of powder metallurgy targets (Targ...

example 2

[0025] The powder metallurgy RMX-12 sputtering target has an average grain size of 40-50 microns and a larger orientation ratio of the (222) crystal direction.

[0026] The sputtering experiments in the Eclipse system were carried out under the following conditions, that is, the power was 10 kW up to 50 kWh, the deposition time was 60 seconds, the argon flow rate was 100 sccm, the chamber pressure was 15 mTorr, and the wafer temperature was 150°C with a target-to-wafer spacing of 2.5 inches (6.4 cm). Sheet resistance was measured at 49 points on a silicon dioxide wafer with a diameter of 150 mm excluding the 6 mm edge.

[0027] Table 2 summarizes the grain orientation data for a conventional target (Target G) and two powder metallurgy targets that were forged (Target 2) and not forged (Target 3) manufactured by casting and thermomechanical processing.

[0028] Table 2

[0029] grain orientation

Grain Orientation Ratio (%)

Cast / press target

P / M ta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The sputter target includes a tantalum body having tantalum grains formed from consolidating tantalum powder and a sputter face. The sputter face has an atom transport direction for transporting tantalum atoms away from the sputter face for coating a substrate. The tantalum grains have at least a 40 percent (222) direction orientation ratio and less than a 15 percent (110) direction orientation ratio in an atom transport direction away from the sputter face for increasing sputtering uniformity, the tantalum body being free of (200)-(222) direction banding detectable by Electron Back-Scattering Diffraction and wherein the sputter target has a purity of at least 99.99 (%) percent.

Description

[0001] This application is a continuation-in-part of US Application No. 09 / 955,348, filed September 18,2001. technical field [0002] The invention relates to the field of tantalum sputtering targets. In particular, the present invention relates to powder metallurgy tantalum sputtering targets. Background technique [0003] Conventional tantalum sputter targets fabricated by casting and thermomechanical processing exhibit (200) and (222) oriented bands alternating across the sputter target face and through the cross-section of the target. For example, the target surface often alternately exhibits lighter-toned grains near the (200) crystal orientation and darker-toned grains near the (222) crystal orientation. Disadvantageously, the sputter yield of (200) textured ribbons is lower than that of (222) textured ribbons, thus resulting in substrates with different thicknesses of tantalum sputtered layers within the substrate. For example, thin layers subjected to sputtering ty...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C22C27/02C22C1/04C23C14/34H01L21/285
CPCB22F2003/248B22F2998/10C23C14/3414C22C1/045C22C27/02B22F3/02B22F3/10B22F3/18B22F3/24C23C14/34
Inventor H·J·科伊尼斯曼恩P·S·吉尔曼
Owner PRAXAIR TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap