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Passivation contact structure and solar cell

A solar cell and contact structure technology, applied in the field of solar cells, can solve the problems of cell performance degradation, affecting passivation performance, and high solar cell carrier recombination rate, and achieves improved conversion efficiency, good surface passivation, and reduced surface recombination. Effect

Pending Publication Date: 2019-06-04
LONGI SOLAR TECH (TAIZHOU) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, due to the contact of metal and semiconductor to form a carrier recombination center, the recombination rate of solar cell carriers is extremely high, which affects the passivation performance, resulting in a significant decline in battery performance.

Method used

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  • Passivation contact structure and solar cell
  • Passivation contact structure and solar cell
  • Passivation contact structure and solar cell

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Embodiment Construction

[0040] The application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain related inventions, rather than to limit the invention. It should also be noted that, for ease of description, only parts related to the invention are shown in the drawings.

[0041] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.

[0042] As mentioned in the background art, the current solar cell structure is to prepare a doped layer on the surface of the solar cell, and then prepare a dielectric film layer and a metal electrode on it. In this case, the region where the metal electrode contacts the doped layer is in direct c...

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Abstract

The invention discloses a passivation contact structure and a solar cell. The passivation contact structure comprises a substrate, a first doping layer is arranged on a first surface area of the substrate, the first doping layer is provided with a passivation tunneling layer in at least part of the side far from the substrate, a doping film layer is arranged in part of the surface, far from the first doping layer, of the first doping layer, and a first dielectric film layer is arranged in an area formed by the surfaces of the first doping layer, the doping film layer and the passivation tunneling layer; and a first electrode penetrates the first dielectric film layer and makes contact with the doping film layer. The first doping layer is separated from the first electrode to effectively shielding a high combination effect of the first electrode effectively, surface recombination is reduced substantially, sound surface passivation is provided for the cell, and the conversion efficiencyof the solar cell is improved.

Description

technical field [0001] The invention generally relates to the technical field of solar cells, in particular to a passivation contact structure and a solar cell. Background technique [0002] The current solar cell structure is to prepare a doped layer on the surface of the solar cell, and then prepare a dielectric film layer and a metal electrode on it. In this case, the region where the metal electrode contacts the doped layer is in direct contact. Usually, due to the contact of metal and semiconductor to form a carrier recombination center, the recombination rate of solar cell carriers is extremely high, which affects the passivation performance, resulting in a significant decline in battery performance. Therefore, there is a need for a better way to reduce the impact of metal recombination on passivation. Contents of the invention [0003] In view of the above defects or deficiencies in the prior art, it is desired to provide a passivation contact structure and a sola...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0216H01L31/068
CPCY02E10/547
Inventor 李华童洪波靳玉鹏
Owner LONGI SOLAR TECH (TAIZHOU) CO LTD
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