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High-passivation heterojunction single crystal silicon thin film solar cell

A technology of solar cells and amorphous silicon thin films, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as high energy consumption

Inactive Publication Date: 2013-11-13
JIFU NEW ENERGY TECH SHANGHAI
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0002] At present, monocrystalline silicon solar cells need to be produced by high-temperature processes such as diffusion furnaces, which will cause high energy consumption.

Method used

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Embodiment Construction

[0004] The structure of the present invention is hereby described as attached figure 1 , detailed below: See figure 2 , is a schematic block diagram of the action flow of the present invention. The process is to first deposit an I-type hydrogenated amorphous silicon film (2) on the front side of the cleaned N-type monocrystalline silicon (1) using plasma-enhanced chemical vapor deposition equipment, and then turn the entire silicon wafer over and place it on the back side. Deposit the I-type hydrogenated amorphous silicon film (2) and the N-type hydrogenated amorphous silicon film (4) in sequence, then turn the entire silicon wafer over and deposit the P-type hydrogenated amorphous silicon film (3) on the front side, Then use magnetron sputtering or reactive physical vapor deposition equipment to deposit a transparent conductive film (5) on the P-type amorphous silicon film (3), and then deposit a transparent conductive film (5) on the N-type amorphous silicon film (4). A t...

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Abstract

The invention discloses a high-passivation heterojunction single crystal silicon thin film solar cell which is novel and can optimize and improve the conversion efficiency of single crystal silicon solar cells. Amorphous silicon is used for forming a film on deposition on single crystal silicon in a matched mode to form a heterogeneous structure. The surface passivation degree of a silicon wafer is affected by the deposition sequence of the amorphous silicon and a transparent conducting film, and therefore the photoelectric conversion efficiency of a device is directly affected. The deposition sequence is provided so as to form the best surface passivation function of the single crystal silicon and reduce the influences of surface pollution, and therefore a high-passivation heterojunction single crystal silicon thin film is formed.

Description

technical field [0001] The present invention relates to a novel technical method that can improve the efficiency of monocrystalline silicon solar cells used in ordinary wafers. Its purpose is to form a heterojunction structure by combining monocrystalline silicon and amorphous The photoelectric conversion efficiency of the battery has increased from 18% to more than 20%. All processes can achieve high-efficiency and low-cost mass production without the need for expensive gas use and high energy-consuming equipment. Background technique [0002] At present, monocrystalline silicon solar cells need to be produced by high-temperature processes such as diffusion furnaces, which will result in high energy consumption. In addition, monocrystalline silicon solar cells will have a great depletion phenomenon (-0.5% / ℃) when the ambient temperature is raised in use, and the temperature of the amorphous silicon process is much lower than that of monocrystalline silicon, and the temperat...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/072H01L31/036H01L31/0224
CPCY02E10/50Y02P70/50
Inventor 郑佳仁刘幼海刘吉人
Owner JIFU NEW ENERGY TECH SHANGHAI
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