High-efficiency heterojunction monocrystalline silicon thin film solar cell

A technology of solar cells and amorphous silicon thin films, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as high energy consumption

Inactive Publication Date: 2013-11-13
JIFU NEW ENERGY TECH SHANGHAI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, monocrystalline silicon solar cells need to be produced by high-temperature processes such as diffusion furnaces, which will cause high energy consumption.

Method used

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Embodiment Construction

[0004] The structure of the present invention is hereby described as attached figure 1 , detailed below: See figure 2 , is a schematic block diagram of the action flow of the present invention. The process is to first deposit an I-type hydrogenated amorphous silicon film (2) and an N-type hydrogenated amorphous silicon film (4 ), and then turn the entire silicon wafer over, deposit I-type hydrogenated amorphous silicon film (2) and P-type hydrogenated amorphous silicon film (3) sequentially on the front, and then use magnetron sputtering or reactive The physical vapor deposition equipment first deposits a transparent conductive film (5) on a P-type amorphous silicon film (3), then deposits a transparent conductive film (5) on an N-type amorphous silicon film (4), and finally uses Silver wires (6) are laid on the front and back sides by screen printing, and the high-efficiency heterojunction monocrystalline silicon thin film solar cell is completed. The hydrogenated amorpho...

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Abstract

At present, a monocrystalline silicon solar cell is manufactured through a diffusion furnace and other high-temperature technologies, and high energy consumption can be caused. In addition, when used, the monocrystalline silicon solar cell can cause very large exhaustion (-0.5%/DEG C) on the increasing of the environment temperature, the temperature of the noncrystalline silicon technique process is far less than the temperature of the monocrystalline silicon technique process, the exhaustion phenomenon to the temperature of the noncrystalline silicon technique process is not as serious as the exhaustion phenomenon (-0.2%/DEG C) to the temperature of the monocrystalline silicon technique process, and therefore the two technologies are combined to form a heterojunction monocrystalline silicon thin film, and the photoelectric conversion efficiency of the heterojunction monocrystalline silicon thin film can enable an original monocrystalline silicon solar cell to be improved to more than 20%. The conversion efficiency of the high-efficiency heterojunction monocrystalline silicon thin film solar cell can be optimized, a heterogeneous structure is formed by utilizing deposited films of noncrystalline silicon on monocrystalline silicon, and the deposition sequence of the noncrystalline silicon and transparent conducting films is the important method for achieving high efficiency. The deposition sequence is provided to form the best monocrystalline silicon surface passivation action and reduce the affect of the surface pollution, and the high-efficiency heterojunction monocrystalline silicon thin film is obtained.

Description

technical field [0001] The present invention relates to a novel technical method that can improve the efficiency of monocrystalline silicon solar cells used in ordinary wafers. Its purpose is to form a heterojunction structure by combining monocrystalline silicon and amorphous The photoelectric conversion efficiency of the battery has increased from 18% to more than 20%. All processes can achieve high-efficiency and low-cost mass production without the need for expensive gas use and high energy-consuming equipment. Background technique [0002] At present, monocrystalline silicon solar cells need to be produced by high-temperature processes such as diffusion furnaces, which will result in high energy consumption. In addition, monocrystalline silicon solar cells will have a great depletion phenomenon (-0.5% / ℃) when the ambient temperature is raised in use, and the temperature of the amorphous silicon process is much lower than that of monocrystalline silicon, and the temperat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/072H01L31/036H01L31/0224
CPCY02E10/50Y02P70/50
Inventor 郑佳仁刘幼海刘吉人
Owner JIFU NEW ENERGY TECH SHANGHAI
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