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Solar energy wafer and preparation method thereof

A technology for solar wafers and wafers, applied in the field of solar wafers of solar cells and their preparation, can solve the problems of inability to precisely control the concentration of doping ions, complex process steps, low conversion efficiency, etc., and achieves reduction of surface recombination probability and uniform concentration , Good surface passivation effect

Active Publication Date: 2014-11-05
KINGSTONE SEMICONDUCTOR LIMITED COMPANY
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Problems solved by technology

[0011] The technical problem to be solved by the present invention is to provide a solar wafer and its Preparation

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  • Solar energy wafer and preparation method thereof
  • Solar energy wafer and preparation method thereof
  • Solar energy wafer and preparation method thereof

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Embodiment Construction

[0041] The preferred embodiments of the present invention are given below in conjunction with the accompanying drawings, and the technical solutions of the present invention are described in detail by taking the solar wafer of the P-type substrate 1 as an example.

[0042] The preparation method of the solar wafer of the present invention comprises the following steps:

[0043] refer to figure 1 , step S 1 , to form an N-type doped layer 2 on the surface of the wafer of the P-type substrate 1. For example, the N-type doped layer 2 can be formed on the surface of the wafer of the P-type substrate by means of ion implantation / annealing or diffusion growth. Those skilled in the art Appropriate doping ions and concentration of doping ions can be selected according to actual needs to obtain ideal sheet resistance, such as 20-50Ω / m 2 .

[0044] refer to figure 2 , step S 2 , the accelerated ions bombard the area 22 on the N-type doped layer 2 that is not covered by the mask 3...

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Abstract

The invention discloses a solar energy wafer and a preparation method thereof. The method comprises the following steps: S1. forming an N-type doped layer on a surface of a wafer of a P-type substrate; S2. accelerating an ion to bombard an area which is not covered by a mask plate on the N-type doped layer and sputtering out a N-type atom of the area which is not covered by the mask plate on the N-type doped layer; S3. forming a coating on the N-type doped layer, wherein the coating comprises: a passivation layer and an antireflection film; S4. plating a metal electrode on the coating corresponding to the area which is not bombarded by the ion on the N-type doped layer; S5. sintering the wafer of the P-type substrate at a temperature of from 700 DEG C to 950 DEG C and simultaneously annealing. In the invention, an ion implantation method and an ion sputtering method are used so that a concentration of the doped ion is uniform. And the concentration of the doped ion can be accurately controlled so that the concentration can be an ideal value. A low-doped surface can be formed so that a conversion efficiency of a solar energy cell can be further improved.

Description

technical field [0001] The invention relates to a solar wafer and a preparation method thereof, in particular to a solar wafer with a solar battery having a selective emitter and a preparation method thereof. Background technique [0002] New energy is one of the five most decisive technological fields in the world economic development in the 21st century. Solar energy is a clean, efficient and inexhaustible new energy source. In the new century, the governments of various countries regard the utilization of solar energy resources as an important content of the national sustainable development strategy. Photovoltaic power generation has the advantages of safety, reliability, no noise, no pollution, less constraints, low failure rate, and easy maintenance. In recent years, with the rapid development of the photovoltaic power generation industry in the world, the supply of solar chips is in short supply, so improving the photoelectric conversion efficiency of solar chips and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0352
CPCY02P70/50
Inventor 陈炯
Owner KINGSTONE SEMICONDUCTOR LIMITED COMPANY
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