Device testing system and method

A test system and device technology, applied in the field of silicon carbide device test platform, can solve problems such as difficult to test the performance of switching devices, single drive signal, insufficient switching frequency, etc., and achieve the effect of high engineering application value

Active Publication Date: 2019-06-07
北京京能新能源有限公司
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Problems solved by technology

[0002] The current test of Mosfet devices mainly adopts the method of double-pulse test. The double-pulse method can be used in the laboratory to complete the test of the basic performance of power devices with relatively simple equipment. However, the existing double-pulse platform has the following disadvantages: First, it is generally Test at room temperature, it is difficult to test the performance of switching

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[0057] In order to make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is a part of the embodiments of the present invention, not all the embodiments. The components of the embodiments of the present invention generally described and illustrated in the drawings herein may be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those sk...

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Abstract

The invention provides a device testing system and method. The system comprises a power input unit, a load unit, a measurement unit, a heating unit, an upper computer and a tested device, wherein thepower input unit is connected with the tested device and used for supplying power to the tested device; the upper computer is connected with the tested device, the tested device includes a driving circuit, and the upper computer transmits a preset driving signal to the driving circuit so as to control the turn-on and turn-off of the driving circuit; the load unit is connected with the driving circuit and used for adjusting the current change rate of the driving circuit when the driving circuit is turned on; the measurement unit is arranged on the driving circuit and used for measuring the voltage and current flowing through the driving circuit; and the heating unit is connected with the tested device and used for heating the tested device to a preset temperature value. According to the embodiment of the invention, the input voltage is adjustable, the load is flexibly configured, and the test temperature can be adjusted.

Description

technical field [0001] The invention relates to the technical field of device testing, in particular to a silicon carbide device testing platform and method. Background technique [0002] The current test of Mosfet devices mainly adopts the method of double-pulse test. The double-pulse method can be used in the laboratory to complete the test of the basic performance of power devices with relatively simple equipment. However, the existing double-pulse platform has the following disadvantages: First, it is generally Test at room temperature, it is difficult to test the performance of switching devices at high temperature; second, the driving signal is single, and it is difficult to test the complete performance of switching devices with two pulses; third, the test platform for IGBT generally has insufficient switching frequency, which is used for Mosfet testing The general voltage of the platform is not enough; the fourth is that different test content needs to be re-loaded a...

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Application Information

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IPC IPC(8): G01R31/26
Inventor 谷金达张存峰樊志勇张铁龙镇红军王丰绪樊立云姚振宇
Owner 北京京能新能源有限公司
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