Device testing system and method

Abstract

The invention provides a device testing system and method. The system comprises a power input unit, a load unit, a measurement unit, a heating unit, an upper computer and a tested device, wherein thepower input unit is connected with the tested device and used for supplying power to the tested device; the upper computer is connected with the tested device, the tested device includes a driving circuit, and the upper computer transmits a preset driving signal to the driving circuit so as to control the turn-on and turn-off of the driving circuit; the load unit is connected with the driving circuit and used for adjusting the current change rate of the driving circuit when the driving circuit is turned on; the measurement unit is arranged on the driving circuit and used for measuring the voltage and current flowing through the driving circuit; and the heating unit is connected with the tested device and used for heating the tested device to a preset temperature value. According to the embodiment of the invention, the input voltage is adjustable, the load is flexibly configured, and the test temperature can be adjusted.

Description

technical field [0001] The invention relates to the technical field of device testing, in particular to a silicon carbide device testing platform and method. Background technique [0002] The current test of Mosfet devices mainly adopts the method of double-pulse test. The double-pulse method can be used in the laboratory to complete the test of the basic performance of power devices with relatively simple equipment. However, the existing double-pulse platform has the following disadvantages: First, it is generally Test at room temperature, it is difficult to test the performance of switching devices at high temperature; second, the driving signal is single, and it is difficult to test the complete performance of switching devices with two pulses; third, the test platform for IGBT generally has insufficient switching frequency, which is used for Mosfet testing The general voltage of the platform is not enough; the fourth is that different test content needs to be re-loaded a...

AI Technical Summary

Problems solved by technology

[0002] The current test of Mosfet devices mainly adopts the method of double-pulse test. The double-pulse method can be used in the laboratory to complete the test of the basic performance of power devices with relatively simple equipment. However, the existing double-pulse platform has the following disadvantages: First, it is generally Test at room temperature, it is difficult to test the performance of switching devices at high temperature; second, the driving signal is single, and it is difficult to test the complete performance of switching devices with two pulses; third, the test platform for IGBT generally has insufficient switching frequency, which is used for Mosfet testing The general voltage of the platform is not enough; Fourth, different test content needs to be loaded and powered again, resulting in low efficiency

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