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Test circuit and method for semiconductor device

A technology for testing circuits and testing methods, which is applied in semiconductor/solid-state device testing/measurement, semiconductor devices, semiconductor/solid-state device components, etc., and can solve problems such as test result influence and leakage current

Inactive Publication Date: 2019-06-07
HUAIAN IMAGING DEVICE MFGR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, there is a method of adding a protection device during the manufacturing process, such as adding a protection diode (Protection Diode), to discharge excess implanted ions, but when the semiconductor device is tested, the protection diode is easy to Leakage is formed, which affects the test results

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  • Test circuit and method for semiconductor device
  • Test circuit and method for semiconductor device
  • Test circuit and method for semiconductor device

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Embodiment Construction

[0024] In an existing manufacturing process of a semiconductor device, a protection device is usually used to protect the semiconductor device. For example, protective diodes are used to avoid plasma damage.

[0025] Specifically, when a semiconductor device is manufactured by processes such as plasma etching, plasma may remain. For example, when manufacturing N-type metal-oxide-semiconductor (N-Metal-Oxide-Semiconductor, NMOS), there will be plasma remaining at the gate.

[0026] refer to figure 1 , figure 1 It is a schematic diagram of a test circuit of a semiconductor device in the prior art. The semiconductor device can be an NMOS device 11, and the test circuit of the semiconductor device can include:

[0027] a protection device, the first end of the protection device is grounded, and the second end is connected to the gate of the NMOS device 11;

[0028] The test power supply 13 is used for providing test voltage during the test.

[0029] Specifically, the protect...

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PUM

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Abstract

The invention relates to a test circuit and method for a semiconductor device, and the semiconductor device is provided with a grid electrode. The circuit comprises a protection device, wherein the first end of the protection device is grounded; a connecting device, wherein the first end of the connecting device is coupled with a grid electrode, and the second end of the connecting device is coupled with the second end of the protection device, and the connecting device is used for providing a connecting circuit between the protection device and the grid electrode; and a power supply which iscoupled with the grid electrode and is used for providing a turn-off voltage for the connecting device during power-on, so that the connecting circuit is switched from connection to disconnection. According to the scheme, the influence of the protection device on a test result can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a test circuit and a test method for a semiconductor device. Background technique [0002] During the manufacturing process of the semiconductor device, the semiconductor device needs to be protected, for example, a protection diode is used to avoid plasma damage (Plasma Damage). [0003] Specifically, taking the semiconductor device as an example of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) device, usually in the manufacturing process, it is necessary to use an ion implantation process to inject (Gate) implants ions. At this time, it is easy to form ion damage due to ion residues. [0004] In the prior art, there is a method of adding a protection device during the manufacturing process, such as adding a protection diode (Protection Diode), to discharge excess implanted ions, but when the semiconductor device is tested, the protection diode is easy to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/525H01L23/60H01L21/66
Inventor 柯天麒苏凤梅汤茂亮
Owner HUAIAN IMAGING DEVICE MFGR CORP