Preparation method of high temperature resistant qfn packaging structure
A packaging structure and high-temperature-resistant technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device parts, semiconductor devices, etc., can solve problems such as excessively large pads and short circuits, reduce usage, and increase cross-linking density , to ensure the effect of stability
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[0028] Embodiments 1 to 4: A preparation method of a high temperature resistant QFN packaging structure, the high temperature resistant QFN packaging structure includes a heat dissipation pad 1, a chip 3 and a conductive pad 4 located in an epoxy insulator 6, and the chip 3 is located in On the heat dissipation pad 1, and the silver paste layer 2 is arranged between the chip 3 and the heat dissipation pad 1, and several conductive pads 4 are arranged on the periphery of the heat dissipation pad 1, and the conductive pad 4 and the chip 3 pass through A lead wire 5 is connected;
[0029] The side of the heat dissipation pad 1 away from the chip 3 is provided with a separation groove 11, the width of the separation groove 11 is 0.1-0.3 mm, and the separation groove 11 divides the side of the heat dissipation pad 1 away from the chip 3 into equal parts. At least two single pads 13, the separation grooves 11 are filled with heat-conducting insulating strips 12, the walls of the sep...
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