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High-voltage power PMOSFET driving circuit

A drive circuit and power technology, applied in the direction of output power conversion devices, electrical components, etc., can solve the problems of limited application range of a single chip, limit the application range of drive chips, and limited adjustable means, so as to improve application adaptability, The effect of reducing development costs and reducing the difficulty of design

Active Publication Date: 2019-06-18
CHINA ELECTRONICS TECH GRP CORP NO 14 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The operating voltage of these high-voltage power drive chips is relatively large, and the scope of application of a single chip is limited. For different power PMOSFET drive requirements, the means of adjustment are often limited, which limits the application range of the drive chip.

Method used

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Embodiment Construction

[0009] The present invention will be further elaborated in combination below.

[0010] In the traditional PMOSFET driving scheme, since the reference voltage of the driving output stage cannot be adjusted externally, the application adaptability to different high-voltage power PMOSFETs is not high. analyze figure 1 The principle scheme of the high-voltage power PMOSFET drive scheme, in order to solve the above problems, the voltage follower output reference voltage VR is expressed as

[0011]

[0012] From formula (1), it can be found that the output reference voltage VR of the voltage follower can obtain different values ​​by changing the ratio of resistors R3 and R4, while ensuring (R3+R4)R2=R3(R1+R2). Desirable R1=R4, R2=R3. In order to improve the symmetry of the resistance, the integration level of the system can be improved by adjusting the on-chip fuse. At the same time, you can also choose an off-chip adjustment method to reduce the complexity of the design, whic...

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Abstract

The invention discloses a high-voltage power PMOSFET driving circuit. The high-voltage power PMOSFET driving circuit comprises a reference voltage generation unit, a voltage follower, a low-voltage difference linear stabilizer, a level converter I, a high-side gate driver, a TTL level converter, a dead region generator, a level converter II, an active relief circuit, a power PMOSFET and a load. With the adoption of flexible and adjustable high-voltage power PMOSFET driving circuit, the application adaptability of the system is improved; the output reference voltages of different voltage followers are acquired by an on-chip fuse adjustment or off-chip resistance adjustment mode, the method is simple and flexible, the design difficulty can be effectively reduced, the application range of thesystem is expanded, and the development cost of the system is reduced.

Description

technical field [0001] The invention relates to a high-voltage power PMOSFET drive circuit, which belongs to the technical field of integrated circuit design and manufacture. Background technique [0002] With the continuous development of semiconductor technology, the application range of high-voltage power driver chips continues to expand, such as automotive electronics, radar receivers, industrial motors, etc. The operating voltage of these high-voltage power drive chips is relatively large, and the scope of application of a single chip is limited. There are often limited means of adjustment for different power PMOSFET drive requirements, which limits the application range of the drive chip. Contents of the invention [0003] In view of the above problems, the present invention provides a high-voltage power PMOSFET driving circuit, which can effectively drive the gate of the power PMOSFET in the radar transmitter system. Compared with the traditional driving scheme, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08
Inventor 徐宏林吴俊杰张浩刘海涛
Owner CHINA ELECTRONICS TECH GRP CORP NO 14 RES INST