This invention discloses a multi-temperature linkage temperature-controlled aluminum
nitride heater and its preparation method, belonging to the field of
semiconductor ceramic technology. The heater includes an aluminum
nitride ceramic substrate and a supporting base. A double-layer heating
electrode is stacked on the
ceramic substrate, wherein the second heating
electrode layer adopts a zoned conductive circuit, dividing the temperature zones from the inside out into a center, inner ring, and outer ring. The inner and outer rings can be further subdivided into multiple independent sector-shaped zones and powered independently. A ceramic
thermal resistor is built into the bottom of each temperature zone, insulated from the circuit, and works in conjunction with a
PID controller to achieve zoned closed-loop
temperature control. This invention solves the problems of poor temperature uniformity, localized overheating, and external
temperature measurement lag in single-layer heating by using a double-layer heating
synergy and a built-in
temperature measurement structure, significantly improving
temperature control accuracy and temperature uniformity. Simultaneously, a special aluminum
nitride-based solder is used to connect the substrate and the base, resulting in good
thermal expansion matching, high interface strength, excellent airtightness, and the ability to withstand high temperatures and thermal
cycling shocks, adapting to the requirements of high-end
semiconductor processes.