Electroluminescent display device
By introducing low-refractive-index partition walls into electroluminescent display devices, the problems of color mixing and low light extraction efficiency at high resolution are solved, and more efficient light output and area increase are achieved.
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no. 1 example
[0022] figure 1 is a circuit diagram showing a single pixel region of the electroluminescent display device according to the present disclosure.
[0023] Such as figure 1 As shown, the electroluminescent display device according to the embodiment of the present disclosure includes a gate line GL, a data line DL, a switching thin film transistor Ts, a driving thin film transistor Td, a storage capacitor Cst, and a light emitting diode D. The gate lines GL and the data lines DL cross each other to define the pixel area SP. A switching thin film transistor Ts, a driving thin film transistor Td, a storage capacitor Cst, and a light emitting diode D are formed in the pixel region SP.
[0024] More specifically, the gate of the switching thin film transistor Ts is connected to the gate line GL, and the source of the switching thin film transistor Ts is connected to the data line DL. The gate of the driving thin film transistor Td is connected to the drain of the switching thin fi...
no. 2 example
[0134] Hereinafter, detailed descriptions of the same or similar configurations as those of the first embodiment may be omitted.
[0135] Figure 4 is a cross-sectional view schematically showing an electroluminescence display device according to a second embodiment of the present disclosure.
[0136] Such as Figure 4 As shown, the electroluminescent display device 200 according to the embodiment of the present disclosure may include: a substrate 210; thin film transistors Td1, Td2 and Td3 and light emitting diodes disposed on the substrate 210 and respectively formed in the pixel regions SP1, SP2 and SP3 D1 , D2 and D3 ; the encapsulation layer 270 disposed on the light emitting diodes D1 , D2 and D3 ; and the color filter layer 280 disposed on the encapsulation layer 270 .
[0137] That is, the thin film transistors Td1, Td2 and Td3 and the light emitting diodes D1, D2 and D3 may be formed on the substrate 210 and respectively formed in the pixel regions SP1, SP2 and SP3,...
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