A kind of black silicon material and preparation method thereof

A technology of black silicon and silicon substrate, which is applied in the field of black silicon materials and its preparation, can solve the problems of insufficient light trapping ability and affecting the light absorption rate of materials, and achieve uniformity and stability, uniform thickness distribution, and absorption rate-enhancing effect

Active Publication Date: 2021-02-19
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

In this patented technology, there were two methods described during manufacturing processes involving forming thin films onto surfaces made of silicon or glass. These techniques resulted in stable and evenly dispersed deposits over large areas without damaging them. By controlling the amount of heat applied at specific points along certain directions, tiny pyramidal structures called snowflakes could emerge on top of each area where they act like small domes. A special type of semiconductive mirror used was developed through sputtering. Overall, this technique allows for precise placement of minute convexities on the desired pattern on the wafer's surface while maintaining their regular size distribution across different wavelength ranges.

Problems solved by technology

This patented technical problem addressed by these inventions relates to finding new ways to improve crystal quality while also improving its performance over existing methods like chemical vapor deposition (CVD). Black silicon can be useful because it allows more efficient use of solar energy without losing any greenhouse gases or pollution caused during production processes. Additionally, there may exist applications where certain characteristics of blacksilicon make them better suited compared to older technologies.

Method used

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  • A kind of black silicon material and preparation method thereof
  • A kind of black silicon material and preparation method thereof
  • A kind of black silicon material and preparation method thereof

Examples

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Effect test

Embodiment 1

[0026] A method for preparing a black silicon material, the preparation path is as follows figure 1 shown, including the following steps:

[0027] Step 1: Obtain a Clean Silicon Substrate

[0028] Choose N-type high-resistance silicon as the substrate material, use the RCA standard cleaning method to clean the silicon substrate, then place the silicon substrate in 10% hydrofluoric acid solution for 10 seconds, and then ultrasonically rinse it with deionized water for 20 minutes , and blow-dried under a nitrogen atmosphere with a purity of 99.99%.

[0029] Step 2: Precipitating the Se film

[0030] Fix the clean silicon substrate obtained in step 1 on the walking unit of the vacuum chamber, take 0.2g of selenium powder with a purity of 99.99% as the evaporation source, evacuate the chamber to vacuum, adjust the workpiece speed to 15rad / min, and evaporate Current 70A, evaporation time 3min. After the precipitation is completed, the thickness of the selenium film deposited o...

Embodiment 2

[0038] A method for preparing a black silicon material, comprising the steps of:

[0039] Step 1: Obtain a Clean Silicon Substrate

[0040] Choose N-type high-resistance silicon as the substrate material, use the RCA standard cleaning method to clean the silicon substrate, then place the silicon substrate in 5% hydrofluoric acid solution for 20 seconds, and then ultrasonically rinse it with deionized water for 20 minutes , and blow-dried under a nitrogen atmosphere with a purity of 99.99%.

[0041] Step 2: Precipitating the Se film

[0042] Fix the clean silicon substrate obtained in step 1 on the walking unit of the vacuum chamber, take 0.2g of selenium powder with a purity of 99.99% as the evaporation source, evacuate the chamber to vacuum, adjust the workpiece speed to 15rad / min, and evaporate Current 50A, evaporation time 4min. After the precipitation is completed, the thickness of the selenium film deposited on the surface of the silicon substrate is 50nm.

[0043] St...

Embodiment 3

[0050] A method for preparing a black silicon material, comprising the steps of:

[0051] Step 1: Obtain a Clean Silicon Substrate

[0052] Choose N-type high-resistance silicon as the substrate material, use the RCA standard cleaning method to clean the silicon substrate, then place the silicon substrate in 8% hydrofluoric acid solution for 15 seconds, and then use deionized water to ultrasonically rinse it for 20 minutes , and blow-dried under a nitrogen atmosphere with a purity of 99.99%.

[0053] Step 2: Precipitating the Se film

[0054] Fix the clean silicon substrate obtained in step 1 on the walking unit of the vacuum chamber, take 0.2g of selenium powder with a purity of 99.99% as the evaporation source, evacuate the chamber to vacuum, adjust the workpiece speed to 15rad / min, and evaporate Current 80A, evaporation time 2min. After the precipitation is completed, the thickness of the selenium film deposited on the surface of the silicon substrate is 200nm.

[0055]...

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Abstract

The invention discloses a black silicon material and a preparation method thereof, which solves the shortcomings of the existing selenium-doped black silicon material preparation method. The preparation method comprises: obtaining a clean substrate; A layer of selenium film; under the hydrogen fluoride gas atmosphere, use femtosecond laser scanning ablation; remove silicon oxide on the surface of the material to obtain black silicon material. In the process of femtosecond laser ablation of the substrate material, the present invention introduces fluorine element, and by means of the chemical reaction between fluorine element and substrate silicon material, the black silicon material prepared has a microstructure cone array on the surface, that is, " This black silicon material has a strong light-trapping property, so the absorption wavelength of the black silicon material obtained in this way is expanded, and the absorption rate for visible light and near-infrared bands can be expanded to more than 93%.

Description

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Claims

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Application Information

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Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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