A method for preparing ultra-thick Ti-Al-C ternary coatings by two-step PVD technology
A ti-al-c, coating technology, applied in coating, metal material coating process, vacuum evaporation plating, etc., can solve the inconvenience of long-term use and other problems, and achieve high-temperature oxidation resistance and film-base bonding force Excellent, good effect of impurity content control
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Embodiment 1
[0034] Such as figure 1 Shown, a kind of two-step method PVD technique of the present invention prepares the method for ultra-thick Ti-Al-C ternary coating, comprises the following steps:
[0035] Pre-preparation of Ti-Al-C ternary coating
[0036] Step (1) Pretreatment: Ultrasonic surface cleaning is performed on the zirconium substrate with acetone and deionized water respectively. After drying in a vacuum drying chamber, the sample is mounted on a three-dimensional turret in the vacuum chamber. The distance between the target and the base is kept at 200 mm. After the furnace door is finished, a high vacuum is drawn, and the vacuum degree reaches 3.5×10 -3 After that, start to heat slowly;
[0037] Step (2) Ion cleaning: After reaching the coating temperature of 350°C, fill in Ar gas, apply high bias voltage, and perform glow sputtering cleaning on the substrate sample, or use an electron gun to heat, clean and etch the substrate sample to further surface cleaning. The A...
Embodiment 2
[0045] Step 1: Pre-preparation of Ti-Al-C ternary coating
[0046] Step (1) Pretreatment: Ultrasonic surface cleaning is performed on the zirconium substrate with acetone and deionized water respectively. After drying in a vacuum drying chamber, the sample is mounted on a three-dimensional turret in the vacuum chamber. The distance between the target and the base is kept at 200 mm. After the furnace door is finished, a high vacuum is drawn, and the vacuum degree reaches 3.5×10 -3 After that, start to heat slowly;
[0047] Step (2) Ion cleaning: After reaching the coating temperature of 350°C, fill in Ar gas, apply high bias voltage, and perform glow sputtering cleaning on the substrate sample, or use an electron gun to heat, clean and etch the substrate sample to further surface cleaning. The Ar pressure is 2.0Pa, the bias voltage is -150V, the duty cycle is 70%, the buncher coil current is 11A, the electron gun power supply voltage is 45V, the current is 90A, and the cleani...
Embodiment 3
[0055] Step (1) Pretreatment: Ultrasonic surface cleaning is performed on the zirconium substrate with acetone and deionized water respectively. After drying in a vacuum drying chamber, the sample is mounted on a three-dimensional turret in the vacuum chamber. The distance between the target and the base is kept at 200 mm. After the furnace door is finished, a high vacuum is drawn, and the vacuum degree reaches 3.5×10 -3 After that, start to heat slowly;
[0056] Step (2) Ion cleaning: After reaching the coating temperature of 350°C, fill in Ar gas, apply high bias voltage, and perform glow sputtering cleaning on the substrate sample, or use an electron gun to heat, clean and etch the substrate sample to further surface cleaning. The Ar pressure is 2.0Pa, the bias voltage is -150V, the duty cycle is 70%, the buncher coil current is 11A, the electron gun power supply voltage is 45V, the current is 90A, and the cleaning time is 30 minutes.
[0057] Step (3) Generate the base c...
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