Electrostatic chuck

Abstract

The invention provides an electrostatic chuck. Heat exchange channels are respectively arranged in the central region and the edge region of the base. An isolation groove is arranged between the central region and the edge region. The isolation groove is annular in shape. A connection body is arranged between the outer wall of the isolation groove near the edge region and the inner wall of the isolation groove near the central region. The isolation groove can isolate the heat transfer between the central region and the edge region and realize the difference of the temperature between the two regions. Meanwhile, existence of the connection body realizes the effect of the reinforcing rib so that the upward protruding deformation of the base surface caused by the excessive stress when the temperature difference between the central region and the edge region is large can be avoided.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular to an electrostatic chuck. Background technique [0002] In the semiconductor manufacturing process, the electrostatic chuck (ESC, Electrostatic Chuck) uses electrostatic force to attract the wafer, and serves the purpose of fixing and supporting the wafer, so as to prevent the wafer from moving or misaligning during the processing process. The electrostatic chuck includes an upper layer of ceramic material. The ceramic material was once buried with DC electrodes. Below the ceramic material layer is a metal base. The metal base is used to support the upper ceramic material layer and assist in controlling the temperature of the upper ceramic material city. [0003] In order to improve the uniformity of the wafer processing process, at present, in some semiconductor equipment, such as inductively coupled plasma equipment, a dual-area electrostatic chuck is used, an...

AI Technical Summary

Problems solved by technology

However, in some applications, when the temperature difference between the two sides of the central area of ​​the electrostatic chuck is large (such as greater than 30 degrees), due to the large thermal expansion coefficient of the metal, the expansion range of the metal in the central area and the edge area will also have a large difference. It will lead to stress concentration on the isolation groove, which will cause the upper surface of the base to be convex and deformed, which will affect the function of the electrostatic chuck above the metal base, and in the worst case will cause the very thin (several millimeters) layer of ceramic material to be squeezed and cracked

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