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Light emitting device package and lighting apparatus comprising sam

A light-emitting device packaging and light-emitting device technology, which is applied to the semiconductor devices of light-emitting elements, lighting and heating equipment, light sources, etc., can solve the problems that have not yet been solved, the technical difficulties of the reflective layer, and the limitation of increasing brightness, so as to improve the light extraction Efficiency, prevention of discoloration, effects of improving reliability

Active Publication Date: 2019-07-02
SUZHOU LEKIN SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] However, according to the prior art, there is a limitation in improving brightness due to technical difficulties in uniformly disposing a reflective layer around a light emitting device in a light emitting device package.
[0014] In addition, when a semiconductor device capable of supplying high power is required, although a semiconductor device capable of increasing power by applying a high power source has been studied, an appropriate solution has not yet been obtained

Method used

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  • Light emitting device package and lighting apparatus comprising sam
  • Light emitting device package and lighting apparatus comprising sam
  • Light emitting device package and lighting apparatus comprising sam

Examples

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Embodiment Construction

[0044]Hereinafter, detailed embodiments for solving the problems involved will be described with reference to the accompanying drawings.

[0045] In the description of the embodiments, it should be understood that when each element is referred to as being "on" or "under" another layer or substrate, it may be directly on or under another layer or substrate, or there may also be a or multiple intermediate layers. In addition, it should be understood that when each element is referred to as being "on" or "under" another layer or substrate, it can mean an upward direction or a downward direction based on the element.

[0046] A semiconductor device may include an electrical device such as a light emitting device or a light receiving device, etc., and the light emitting device and the light receiving device may include a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer.

[0047] According to an embodiment, the semiconduct...

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PUM

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Abstract

An embodiment relates to a light emitting device, a method for manufacturing the light emitting device, a light emitting device package, and a lighting apparatus. The light emitting device package, according to an embodiment, can comprise: a package body (110) comprising frames (111, 112) and a body; a light emitting device (120) comprising first and second bonding parts (121, 122) so as to be arranged on the body (13); a reflective resin layer arranged between the light emitting device and the lateral side of a cavity (C) provided in the body; a transparent resin layer on the light emitting device; and a phosphor layer arranged on the transparent resin layer while being spaced from the light emitting device.

Description

technical field [0001] Embodiments relate to a semiconductor device package, a method of manufacturing the semiconductor device package, and a light source apparatus. Background technique [0002] Semiconductor devices including compounds such as GaN and ALGaN have many advantages such as wide and easily adjustable bandgap energy, so such devices can be variously used as light-emitting devices, light-receiving devices, and various diodes. [0003] In particular, due to the development of thin film growth technology and device materials, light-emitting devices (such as light-emitting diodes and laser diodes) obtained by using III-V or II-VI compound semiconductor substances can realize light with various wavelength bands, such as Red light, green light, blue light and ultraviolet light. In addition, light emitting devices such as light emitting diodes and laser diodes obtained by using III-V or II-VI compound semiconductor substances can realize white light sources with high...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/48H01L33/20H01L33/10H01L33/50H01L33/52H01L33/00F21K9/00
CPCH01L33/505H01L33/52H01L33/60H01L33/62H01L33/38H01L33/486H01L33/507H01L33/54H01L33/10H01L33/20H01L33/50H01L33/483F21K9/00H01L33/56H01L2933/0041H01L2933/005H01L2933/0058H01L2933/0066H01L2933/0091
Inventor 金基石任仓满金元中宋俊午
Owner SUZHOU LEKIN SEMICON CO LTD
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