Manufacturing method of full-color micro-led display device based on quantum dot light conversion layer
A technology of light conversion layer and display device, applied in semiconductor devices, electrical solid devices, electrical components, etc., can solve the problems of optical crosstalk, light source array and quantum dot film layers are closely adhered and difficult to separate, etc.
Active Publication Date: 2021-04-09
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology
[0006] The present invention solves the problem that the existing quantum dot materials are directly coated on the surface of the Micro-LED. After the coating process is completed, the quantum dot materials above the adjacent pixel units will diffuse laterally during the low-temperature thermal annealing process, and the mixing of different quantum dot materials will cause serious problems. The problem of optical crosstalk, the problem that the light source array and the quantum dot film layer are tightly adhered and difficult to separate, and a method for manufacturing a full-color Micro-LED display device based on a quantum dot light conversion layer is provided
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specific Embodiment approach 1
[0025] Specific implementation mode 1. Combination Figure 1 to Figure 4 Describe this embodiment, the fabrication method of the full-color Micro-LED display device based on the quantum dot light conversion layer, the method is realized by the following steps:
[0026] Step S101: Provide a blue LED epitaxial wafer with a sapphire substrate 17, a Si-based CMOS passive drive backplane, and manufacture a monochrome Micro-LED display device;
[0027] combine figure 2 a, after the GaN-based LED epitaxial wafer 2 on the sapphire substrate 17 and the Si-based CMOS active driving backplane 1 are bonded at the wafer level, after the sapphire substrate 17 is lifted off by laser, a single pixel can be prepared by ICP etching and other technologies Single-color Micro-LED array driven by independent addressing3, figure 2 b is a cross-sectional view of a monochromatic Micro-LED array, figure 2 c is the top view of the monochromatic Micro-LED array.
[0028] The preparation of the mon...
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A method for manufacturing a full-color Micro-LED display device based on a quantum dot light conversion layer, which relates to the field of display preparation technology, and solves the problem of directly coating the existing quantum dot material on the surface of the Micro-LED. After the coating process is completed, the area above the adjacent pixel unit Quantum dot materials will diffuse laterally during low-temperature thermal annealing, and the mixing of different quantum dot materials will cause serious optical crosstalk problems. The light source array and the quantum dot film layer are closely adhered together, and there is a problem that it is difficult to separate. The light conversion layer substrate is prepared by coating different colors of quantum dot materials on different positions of the glass or polymer substrate. The monochromatic Micro-LED display array is bonded to the light conversion substrate to realize the full-color display of Micro-LED. A DBR reflector is prepared at the bottom of the groove to suppress the emission of the monochromatic Micro-LED array light source and improve the utilization rate of the light source. The full-color Micro-LED display device prepared by this method has the advantages of less optical crosstalk between adjacent pixels, high utilization rate of excitation light source, and high display quality.
Description
technical field [0001] The invention relates to the technical field of display preparation, in particular to a full-color Micro-LED display device based on a quantum dot light conversion layer and a manufacturing method thereof. Background technique [0002] Micro-LED is the latest achievement of further miniaturization of traditional LED with the continuous development of micro-nano processing technology in recent years. The size of the light-emitting unit of traditional LED is usually larger than 100 μm, while the size of a single Micro-LED is less than 100 μm. The Micro-LED display device is a two-dimensional array display device composed of high-density pixel light-emitting units integrated on a single chip. Compared with LCD and OLED display devices, Micro-LED display devices have advantages in power consumption, service life, responsiveness, and viewing angle, and also have a display quality that is superior to LCD and close to OLED. [0003] At present, there are man...
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IPC IPC(8): H01L27/15H01L33/50
CPCH01L27/156H01L33/508H01L2933/0041
Inventor 王惟彪王家先梁静秋陶金李阳赵永周吕金光秦余欣王浩冰
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI