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Fast write-in method of single-tube single-resistance random access memory array

A random access memory, single-tube technology, applied in the field of memory, can solve problems such as high redundancy, and achieve the effect of reducing the required time and saving ports

Inactive Publication Date: 2019-07-09
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, when making a compromise between time and storage resources, it is often chosen to retain the original data format and allow a higher degree of redundancy

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  • Fast write-in method of single-tube single-resistance random access memory array

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Embodiment Construction

[0023] In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and which show by way of illustration specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. For example, features illustrated or described with respect to one embodiment can be used or combined with other embodiments to yield a still further embodiment. It is intended that the present invention include such modifications and variations. The embodiments are described using specific language which should not be construed as limiting the scope of the appending claims. The drawings are not drawn to scale and are for illustration purposes only.

[0024] A fast writing method of a single-tube single-resistance random access memory array proposed by the present invention, said method comprisin...

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Abstract

The invention discloses a fast write-in method of a single-tube single-resistance random access memory array. Due to the fact that data cannot be compressed in application occasions such as high-performance computing, the requirement for writing data with a large number of redundancies exists. An original random access read-write mode for a single device is low in efficiency. Regarding the characteristic, the compression of the writing time can be realized in a manner of writing data in one direction and then writing data in the other direction by using the terminals in the short-circuit array. Particularly, the operation is carried out by using the substrate of the array, the original array architecture can be compatible, and a new interconnection structure does not need to be introduced.

Description

technical field [0001] The invention belongs to the field of memory, in particular to a fast writing method of a single-tube single-resistance random access memory array. Background technique [0002] Single-transistor single-resistance (1T1R) random access memory (RAM) is a kind of memory that can read and write arbitrary storage bits in constant time. At the same time, since the resistance value of the resistor is used to store information, the single-resistance single-transistor random access memory is usually non-volatile. Although any bit in RAM has the same read time and thus can be read quickly, for some special data, reading one by one may not be the best way. For example, because the stored data has a certain degree of redundancy, in traditional communications and other fields, people use special coding to compress this redundancy as much as possible, that is, to increase the information entropy of the data. However, since decoding these data needs to be read and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16
CPCG11C11/1675
Inventor 赵毅高世凡于薇陈冰
Owner ZHEJIANG UNIV
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