Sensitive amplifier device and output control method thereof

Abstract

The invention provides a sensitive amplifier device and an output control method thereof. The sensitive amplifier device comprises a first phase inverter and a second phase inverter, wherein the first phase inverter is connected with the output end of the sensitive amplifier; the input end of the second phase inverter is connected with the output end of the first phase inverter; and the output end of the second phase inverter is connected with the input end of the first phase inverter. The output control method comprises the following steps: feeding back the output signal of the first phase inverter to the input end of the first phase inverter; dividing the transmission curve of the first phase inverter into at least two stages, i.e. the fist stage and the second stage, wherein the first stage is a normal sensing stage, and the transmission curve of the second stage is a hysteresis curve of which the equivalent slope is less than that of the normal sensing stage. The sensitive amplifier device and the output control method thereof can prevent power supply noise and land noise from exceeding the noise tolerance and can improve the speed of the sensitive amplifier.

Description

technical field [0001] The invention relates to the technical field of semiconductor storage, in particular to a sense amplifier device and an output control method thereof. Background technique [0002] With the widespread application of portable electronic devices such as mobile phones, palmtop computers, and GPS, semiconductor memory technology develops rapidly. In recent years, due to the advantages of high density, low power consumption and low price, advanced memories such as DRAM, EEPROM, and FLASH have become widely used storage devices in computers and mobile communication terminals. [0003] Sensitive amplifiers are used to detect information in memory cells in semiconductor memories. Since the read speed of the sense amplifier determines the access speed of the memory, it is generally hoped that its design should be as fast as possible. [0004] The Chinese patent No. 200610011812.1 proposes a sense amplifier circuit suitable for read operation in flash memory u...

AI Technical Summary

Problems solved by technology

Power supply noise (VDD noise) and ground noise (GND noise) can easily eat into these noise margins (i.e., exceed said noise margins), causing memory to function incorrectly

[0008] The problem however is that if one takes the approach of reducing the slope of the transfer curve to avoid the functional errors described above, the readout speed of the sense amplifier is lost

[0009] It can be seen that due to the above problems in the traditional technology, it is not only necessary to avoid the influence of power supply noise and ground noise exceeding the noise tolerance in the design of the sense amplifier circuit, but also not at the expense of the loss of reading speed

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