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Flash memory and voltage control method thereof

A voltage control method and memory technology, applied in the field of information storage, can solve problems such as increased leakage current, large leakage current, and influence on N2 floating gate voltage, and achieve the effects of ensuring reliability, reducing impact, and reducing leakage current

Inactive Publication Date: 2014-04-16
GIGADEVICE SEMICON (BEIJING) INC
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Problems solved by technology

The existence of the coupling capacitor will affect the voltage on the floating gate of N2, which will further increase the leakage current of N2 and affect the output result of the read operation.
[0006] Aiming at the problem of large leakage current in unselected memory cells during the read operation of flash memory in related technologies, no effective solution has been proposed yet

Method used

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  • Flash memory and voltage control method thereof
  • Flash memory and voltage control method thereof
  • Flash memory and voltage control method thereof

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Embodiment Construction

[0017] Hereinafter, the present invention will be described in detail with reference to the drawings and examples. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0018] The embodiment of the present invention improves the voltage control scheme of the flash memory (or chip). When the chip is in the standby state (standby), the standby voltage generated by the internal voltage generation module is in addition to the preset positive voltage required for the read operation. There is also a negative voltage. In this way, during the read operation, the negative voltage can be applied to the gate of the unselected memory cells instead of 0V, which greatly reduces the leakage current of these cells, thereby reducing their influence on the read operation process and ensuring the read operation. reliability of the results. Based on this, an embodiment of the present...

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Abstract

The invention provides a flash memory and a voltage control method thereof. The method comprises the following steps: when the flash memory is in a standby state, generating a standby positive voltage and a standby negative voltage; receiving a read operation command and according to the read operation command, selecting a storage unit; applying the standby positive voltage to a grid electrode of the selected storage unit and applying the standby negative voltage to grid electrodes of unselected storage units. According to the invention, under the condition of not influencing the reading speed of the flash memory, leakage currents of the unselected storage units in the read operation process can be reduced, the influence of the leakage currents on the read operation process can be reduced and reliability of a read-out result can be ensured.

Description

technical field [0001] The invention relates to the field of information storage, and more specifically, to a flash memory and a voltage control method thereof. Background technique [0002] Flash memory is a type of memory that is widely used at present, and with the development of the consumer electronics market, its market size is still expanding. Such as figure 1 The schematic structural diagram of the flash memory is shown, which includes a voltage generating module and a storage array (including a plurality of storage units). Generally, flash memory has functions of reading, programming and erasing. These functions are realized by applying corresponding voltages to the storage array through the voltage generating module. When electrons are injected into the floating gate of the memory cell, the switching threshold voltage of the memory cell increases, and the memory cell is in a programmed state. After the electrons trapped in the floating gate are removed, the swi...

Claims

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Application Information

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IPC IPC(8): G11C7/10G11C7/12
Inventor 胡洪王林凯刘铭
Owner GIGADEVICE SEMICON (BEIJING) INC
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