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Semiconductor Power Devices

A power device and semiconductor technology, which is applied in the field of semiconductor power devices with electron and hole double carrier conduction

Active Publication Date: 2020-12-11
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In view of this, the purpose of the present invention is to provide a semiconductor power device to solve the technical problem of how to further improve the output current density of the semiconductor power device in the prior art

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  • Semiconductor Power Devices
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Embodiment Construction

[0029] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be fully described below in a specific manner in conjunction with the drawings in the embodiments of the present invention. Apparently, the described embodiments are some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts, All fall within the protection scope of the present invention.

[0030] It should be understood that terms such as "having", "comprising" and "including" used herein do not denote the presence or addition of one or more other elements or combinations thereof. At the same time, in order to clearly illustrate the specific implementation of the present invention, the schematic diagrams listed in the accompanying drawings of the description...

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Abstract

The invention belongs to the field of semiconductor power device technologies and specifically discloses a semiconductor power device. The semiconductor power device comprises a semiconductor substrate, at least one MOSFET unit and at least one collector region of a second conducting type, wherein the MOSFET units are formed on the semiconductor substrate, and each MOSFET unit comprises a drain region which is located at the bottom of the semiconductor substrate and is of a first conducting type; and the collector regions are located in the semiconductor substrate and on the drain regions, andthe collector regions and the drain regions are connected to form a pn-junction structure. Through the semiconductor power device, double-carrier conduction of electrons and holes can be realized, and output current density of the semiconductor power device is increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, in particular to a semiconductor power device with double carrier conduction of electrons and holes. Background technique [0002] Semiconductor power devices include planar diffusion MOS transistors and trench MOS transistors. Because the trench type MOS transistor adopts a vertical current channel structure, its area can be much smaller than that of the planar diffusion type MOS transistor, so its current density can be greatly improved. The cross-sectional structure of a trench type MOS transistor in the prior art is as follows figure 1 As shown, it includes a drain region 50 at the bottom of the semiconductor substrate, a source region 53 and a body region 52 at the top of the semiconductor substrate, a drift region 51 between the body region 52 and the drain region 50, and the body region 52 is located at the source region 53 Between the drift region 51, the current cha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/739
CPCH01L29/7393H01L29/7813
Inventor 袁愿林毛振东刘伟王睿
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD