III-nitride enhanced HEMT device and preparation method thereof
A nitride and enhanced technology, applied in the field of microelectronics technology, can solve the problems of device performance degradation, defects, damage, etc.
Pending Publication Date: 2021-01-29
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology
F ion implantation can realize an enhanced HEMT device, and the threshold voltage can be adjusted through the selection of implantation conditions, and no etching is required. However, if F ion implantation is too deep, defects and damage will be generated, resulting in a decrease in device performance.
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[0041] The invention also discloses a method for preparing a III-nitride enhanced HEMT device, including:
[0042] provide the substrate;
[0043] Epitaxial growth of group III nitride heterojunction on the substrate, the group III nitride heterojunction includes channel layer and barrier layer;
[0044] Epitaxial growth of an energy absorbing layer on the under-gate region of the III-nitride heterojunction;
[0045] epitaxially growing a group III nitride semiconductor layer on the non-under-gate region of the group III nitride heterojunction;
[0046] Etching the group III nitride semiconductor layer and part of the group III nitride heterojunction to form the source region and the drain region;
[0047] Depositing the source and drain in the source region and the drain region respectively;
[0048] F ion implantation is performed on all or part of the energy absorbing layer to regulate the threshold voltage;
[0049] A gate is deposited on the energy absorbing layer.
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Abstract
The invention discloses a III-nitride enhanced HEMT device and a preparation method thereof, and the HEMT device comprises a substrate, a III-nitride heterojunction located on the substrate, an energyabsorption layer and a semiconductor layer which are located on the III-nitride heterojunction, and a metal electrode. The III-nitride heterojunction comprises a channel layer located on the substrate and a barrier layer located on the channel layer, and the metal electrode comprises a source electrode and a drain electrode located on the III-nitride heterojunction, and a grid electrode located on the energy absorption layer and located between the source electrode and the drain electrode. The whole or part of the energy absorption layer is an F ion implantation region, and the threshold voltage is regulated and controlled through F ion implantation. According to the HEMT device, the F ion implantation region is arranged in the under-gate region and serves as the energy absorption layer,damage in the ion implantation process is effectively reduced, and the purpose of improving the performance of the HEMT device is achieved; the threshold voltage of the HEMT device is regulated and controlled by controlling the ion implantation condition, and the high threshold voltage is achieved.
Description
technical field [0001] The invention belongs to the technical field of microelectronic technology, and in particular relates to a group III nitride enhanced HEMT device and a preparation method thereof. Background technique [0002] HEMT (High Electron Mobility Transistor) devices are made by making full use of the two-dimensional electron gas formed by the semiconductor heterostructure (Heterostructure). Compared with the III-VI group (such as AlGaAs / GaAs HEMT), the III-group nitride semiconductor Due to piezoelectric polarization and spontaneous polarization effects, a high-concentration two-dimensional electron gas can be formed in heterostructures (such as AlGaN / GaN). Therefore, in HEMT devices made of group III nitrides, the barrier layer generally does not need to be doped. At the same time, group III nitrides have the characteristics of large band gap, high saturated electron drift velocity, high critical breakdown electric field and strong radiation resistance, whic...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L29/778H01L29/10H01L21/335
CPCH01L29/66462H01L29/7787H01L29/1029
Inventor 张宝顺宋亮张晓东于国浩
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI