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Semiconductor super-junction power device

A power device and semiconductor technology, applied in the field of semiconductor superjunction power devices

Active Publication Date: 2019-07-09
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In view of this, the purpose of the present invention is to provide a semiconductor super junction power device, to solve the technical problem of how to further improve the output current density of the semiconductor super junction power device in the prior art

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  • Semiconductor super-junction power device
  • Semiconductor super-junction power device
  • Semiconductor super-junction power device

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Embodiment Construction

[0024] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be fully described below in a specific manner in conjunction with the drawings in the embodiments of the present invention. Apparently, the described embodiments are some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts, All fall within the protection scope of the present invention.

[0025] It should be understood that terms such as "having", "comprising" and "including" used herein do not denote the presence or addition of one or more other elements or combinations thereof. At the same time, in order to clearly illustrate the specific implementation of the present invention, the schematic diagrams listed in the accompanying drawings of the description...

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Abstract

The invention belongs to the technical field of semiconductor power devices, and particularly discloses a semiconductor super-junction power device. The semiconductor super-junction power device comprises a semiconductor substrate, wherein a MOSFET unit and an IGBT unit are formed on the semiconductor substrate; and a p-type collector region of the IGBT unit is connected with an n-type drain region of the MOSFET unit to form a pn junction structure, wherein the pn junction structure has relatively high tunneling current, so that the p-type collector region of the IGBT unit and the n-type drainregion of the MOSFET unit are electrically close to a short circuit state. According to the semiconductor super-junction power device, electron and hole dual-carrier conduction can be realized, and the output current density of the semiconductor super-junction power device is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, in particular to a semiconductor superjunction power device with electron and hole double carrier conduction. Background technique [0002] The cross-sectional structure of a semiconductor superjunction power device in the prior art is as follows: figure 1 As shown, it includes a drain region 50 at the bottom of the semiconductor substrate, and the drain region 50 is connected to the drain through a drain contact metal layer 58; a source region 53 and a body region 52 at the top of the semiconductor substrate, and the source region 53 and the body region 52 pass through the source region The pole contact metal layer 57 is connected to the source; the drift region 51 between the drain region 50 and the body region 52 forms a pn junction structure between the columnar doped region 59 and the drift region 51, and the body region 52 is located between the source region 53 and the ...

Claims

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Application Information

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IPC IPC(8): H01L27/06H01L29/06
CPCH01L27/06H01L29/0634
Inventor 刘磊刘伟龚轶袁愿林
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD