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Process for manufacturing vertically interconnected radio frequency cube structure

A manufacturing process and cube technology, which is applied in the field of radio frequency cube structure manufacturing process, can solve the problems of increasing module cost, module fragmentation, cracking, etc., and achieve the effect of reducing process difficulty and cost and avoiding introduction

Active Publication Date: 2019-07-12
浙江集迈科微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for higher-density TSV adapter boards, if the number of stacked layers is large and the stress is too large, it will often cause the entire module to break or interlayer cracks, and the multi-layer TSV structure will greatly increase the entire module. cost

Method used

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  • Process for manufacturing vertically interconnected radio frequency cube structure
  • Process for manufacturing vertically interconnected radio frequency cube structure
  • Process for manufacturing vertically interconnected radio frequency cube structure

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Embodiment Construction

[0032] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0033] A manufacturing process of a vertically interconnected radio frequency cube structure provided by an embodiment of the present invention specifically includes the following steps:

[0034] A: Make a groove on the surface of the RF chip adapter board, and fill the groove with metal; open a cavity on the front of the adapter board, and embed the RF chip;

[0035] Such as Figure 1a As shown, a groove 103 is formed on the surface of the radio ...

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Abstract

The invention discloses a process for manufacturing a vertically interconnected radio frequency cube structure. The process comprises a step of making a groove on the surface of a radio frequency chipadapter board and filling the groove with metal, a step of making a cavity on the front surface of the adapter board and embedding a radio frequency chip, a step of making RDL and a pad on one side of the radio frequency chip, thinning the back surface of the adapter board, and making a pad on the back surface, a step of welding the radio frequency chip and the adapter board together by wafer-level bonding, a step of obtaining a single cube by mechanical cutting, and a step of installing an antenna on an upper side of the cube, installing an interconnecting adapter board and a power driving chip on a side of the cube to complete the electrical interconnection of the cube to obtain a final functional radio frequency cube.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a manufacturing process of a vertically interconnected radio frequency cube structure. Background technique [0002] For high-frequency microsystems, the area of ​​the antenna array is getting smaller and smaller, and the distance between the antennas must be kept within a certain range so that the entire module can have excellent communication capabilities. However, for analog device chips such as radio frequency chips, the area cannot be reduced exponentially like digital chips. In this way, there will be no enough area for ultra-high frequency radio frequency microsystems to place PA / LNA at the same time. LNAs are stacked. [0003] For stacked modules, it is necessary to connect the upper chip to the lower layer through TSV interconnection, and finally interconnect with the substrate to realize the output of the function. However, for higher-density TSV ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48H01L21/60H01L23/66
CPCH01L21/4817H01L23/66H01L24/03H01L24/82H01L2223/6677H01L2224/0231H01L2224/82007H01L2224/13025H01L2224/16227
Inventor 冯光建王志宇张兵周琪张勋郁发新
Owner 浙江集迈科微电子有限公司