Series resonant dual active bridge converter based on hybrid switch of si-igbt and sic-mosfet

Abstract

A series resonant dual active bridge converter based on Si-IGBT and SiC-MOSFET hybrid switches, which consists of two H-bridges, resonant inductors, resonant capacitors and transformers. The switching devices of the two H-bridges are Si-IGBT and A hybrid switch module composed of SiC-MOSFETs connected in parallel. By optimizing the switching timing of Si-IGBT and SiC-MOSFET in the hybrid switch, Si-IGBT flows a large current while SiC-MOSFET flows a small current when it is normally turned on, and the control method of the present invention can improve the efficiency and reliability of the converter and flexibility.

Description

technical field [0001] The invention relates to a hybrid switch series resonant double active bridge converter. Background technique [0002] In recent years, renewable energy represented by solar energy and wind energy has received extensive attention and rapid development. The series resonant dual active bridge converter has the characteristics of realizing bidirectional flow of energy between different electrical nodes, simple and efficient, and high power density. , and the working current of the circuit is approximately a sinusoidal current, the instantaneous switching current of the device is approximately zero, and the efficiency of the device is high. It is the key device of the energy router and has become the focus of research. There is still room for improvement in the efficiency and reliability of the source bridge converter. [0003] Silicon carbide devices have attracted the attention of many researchers due to their high switching frequency: one order of magn...

AI Technical Summary

Problems solved by technology

However, the current SiC-MOSFET still has the following two problems: low current-carrying capacity, limited by the technology level, the single-chip current-carrying capacity of SiC-MOSFET is far inferior to Si-IGBT; high cost, according to the literature SiC-MOSFET is the same specification 5-10 times the price of Si-IGBT

[0005] The problem of SiC-MOSFET is that the flow capacity is weak and the cost is high

The use of hybrid switching devices results in an increase in device cost at the same capacity due to increased device efficiency and reliability

Patents such as CN201711442097.1 and CN201711475192.1 did not solve the overcurrent problem of SiC-MOSFET, which caused it to be easily damaged, or the device could not operate under large capacity

However, under low-capacity and low-current conditions, existing SiC-MOSFETs can basically meet the demand, and there is no need to use hybrid switches

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