Laser annealing equipment and laser annealing method
A laser annealing and equipment technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems such as substrate damage and sudden temperature changes, and achieve the effects of improving heating efficiency, reducing annealing time, and improving processing efficiency
Active Publication Date: 2021-08-24
YUNGU GUAN TECH CO LTD
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Problems solved by technology
[0003] However, the laser irradiation annealing treatment of amorphous silicon directly in the process chamber, due to the high laser temperature, the substrate temperature changes suddenly, which is easy to cause damage to the substrate
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[0027] Features and exemplary embodiments of various aspects of the invention will be described in detail below. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without some of these specific details. The following description of the embodiments is only to provide a better understanding of the present invention by showing examples of the present invention. In the drawings and the following description, at least some well-known structures and techniques have not been shown in order to avoid unnecessarily obscuring the present invention; and, for clarity, the dimensions of some structures may have been exaggerated. Furthermore, the features, structures, or characteristics described hereinafter may be combined in any suitable manner in one or more embodiments.
[0028] The orient...
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Abstract
The invention discloses a laser annealing device and a laser annealing method. The laser annealing equipment includes: a connected preheating chamber and a process chamber; a first heating mechanism is arranged in the preheating chamber, the first heating mechanism has a plurality of first heating zones, and the heat radiation capacity of the multiple first heating zones The distribution from the entrance of the preheating chamber to the entrance of the process chamber is gradient and has an upward trend; a laser processing part is arranged in the process chamber, and the substrate to be processed is laser annealed in the laser processing part. In the laser annealing equipment disclosed in the present invention, the first heating mechanism in the preheating chamber can pre-set the substrate to prevent damage to the substrate caused by sudden temperature changes, and the substrate to be processed is heated up in the preheating chamber before entering the process chamber The laser annealing process can be performed in the chamber, which can reduce the annealing time and improve the efficiency of the laser annealing process.
Description
technical field [0001] The invention belongs to the field of display technology, in particular to a laser annealing device and a laser annealing method. Background technique [0002] ELA (Excimer Laser Annealing, excimer laser annealing) refers to irradiating amorphous silicon with an excimer laser to realize the transformation of amorphous silicon into polysilicon. The ELA process is currently the mainstream technology for preparing low-temperature polysilicon thin film transistor display panels. Excimer lasers are used to irradiate a substrate with an amorphous silicon structure to transform it into a substrate with a polysilicon structure at high temperature. [0003] However, if the amorphous silicon is irradiated with laser and annealed directly in the process chamber, since the laser temperature is high, the temperature of the substrate changes suddenly, which is easy to cause damage to the substrate. Contents of the invention [0004] Embodiments of the present inv...
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IPC IPC(8): H01L21/67H01L21/268
CPCH01L21/268H01L21/67115
Inventor 赵新宇赵长征王森徐杨
Owner YUNGU GUAN TECH CO LTD