grow bi in c-axis orientation with si as substrate 4 ti 2.95 co 0.05 o 12 Multiferroic thin film and preparation method thereof

A bi4ti2.95co0.05o12, oriented growth technology, applied in chemical instruments and methods, cobalt compounds, inorganic chemistry, etc., can solve the problems of large difference in lattice matching degree and thermal expansion coefficient, and unsatisfactory film performance. The effects of high remanent polarization, low cost of raw materials, and stable properties of the sol

Active Publication Date: 2022-04-12
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Si substrate and Bi 4 Ti 3 o 12 The lattice matching degree and the thermal expansion coefficient of the similar materials are quite different, resulting in Bi 4 Ti 3 o 12 The growth of thin-film-like materials on Si substrates is non-oriented, so that the performance of the thin-film is not very ideal

Method used

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  • grow bi in c-axis orientation with si as substrate <sub>4</sub> ti <sub>2.95</sub> co <sub>0.05</sub> o <sub>12</sub> Multiferroic thin film and preparation method thereof
  • grow bi in c-axis orientation with si as substrate <sub>4</sub> ti <sub>2.95</sub> co <sub>0.05</sub> o <sub>12</sub> Multiferroic thin film and preparation method thereof
  • grow bi in c-axis orientation with si as substrate <sub>4</sub> ti <sub>2.95</sub> co <sub>0.05</sub> o <sub>12</sub> Multiferroic thin film and preparation method thereof

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Effect test

Embodiment 1

[0044] Growth of Bi in c-axis orientation on Si substrate 4 Ti 2.95 co 0.05 o 12 Multiferroic film, by weight percentage, includes the following components: Bi(NO 3 ) 2 ·5H 2 O7.63%, Co(NO 3 ) 2 ·6H 2 O0.1%, butyl titanate 3.5%, ethylene glycol methyl ether 80.4%, acetylacetone 8.37%.

Embodiment 2

[0046] Growth of Bi in c-axis orientation on Si substrate 4 Ti 2.95 co 0.05 o 12 Multiferroic film, by weight percentage, includes the following components: Bi(NO 3 ) 2 ·5H 2 O19.22%, Co(NO 3 ) 2 ·6H 2 O0.26%, butyl titanate 8.88%, ethylene glycol methyl ether 50.64%, acetylacetone 21%.

Embodiment 3

[0048] Growth of Bi in c-axis orientation on Si substrate 4 Ti 2.95 co 0.05 o 12 Multiferroic film, by weight percentage, includes the following components: Bi(NO 3 ) 2 ·5H 2 O12.93%, Co(NO 3 ) 2 ·6H 2 O0.18%, butyl titanate 5.69%, ethylene glycol methyl ether 66.55%, acetylacetone 14.65%.

[0049] The present invention prepares Bi 4 Ti 2.95 co 0.05 o 12 The multiferroic thin film specifically comprises the following steps:

[0050] Step 1: According to Bi(NO 3 ) 2 ·5H 2 O: ethylene glycol methyl ether = (0.75 ~ 3): molar ratio of 10, weigh a certain amount of Bi (NO 3 ) 2 ·5H 2 Add O and ethylene glycol methyl ether into the beaker, stir at room temperature for 10-30 minutes until completely dissolved, and form solution A;

[0051] According to Co(NO 3 ) 2 ·6H 2 O: ethylene glycol methyl ether = (9.125 × 10 -3 ~0.0365):10 molar ratio, weigh a certain amount of Co(NO 3 ) 2 ·6H 2 Add O and ethylene glycol methyl ether into the beaker, stir at room temp...

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Abstract

Growth of Bi in c-axis orientation on Si substrate 4 Ti 2.95 co 0.05 o 12 Multiferroic thin films, including the following components: Bi(NO 3 ) 2 ·5H 2 O, Co(NO 3 ) 2 ·6H 2 O, butyl titanate, ethylene glycol methyl ether, acetylacetone; the steps of the preparation method are: with Bi 4 Ti 2.95 co 0.05 o 12 Sol as the precursor, in the c-axis oriented LaNiO 3 Preparation of Bi on Si substrate as buffer layer 4 Ti 2.95 co 0.05 o 12 Gel film, followed by drying and heat treatment to prepare Bi with c-axis orientation 4 Ti 2.95 co 0.05 o 12 Multiferroic thin film; has excellent electrical conductivity, can replace noble metals such as platinum and gold as Bi 4 Ti 2.95 co 0.05 o 12 Characterization of the bottom electrode for thin film electrical performance testing.

Description

technical field [0001] The invention belongs to the technical field of thin film preparation and multiferroic materials, in particular to the c-axis orientation growth of Bi with Si as the substrate 4 Ti 2.95 co 0.05 o 12 Multiferroic thin films grown on Si substrate with c-axis orientation Bi 4 Ti 0.95 co 0.05 o 12 Multiferroic films. Background technique [0002] Bismuth titanate (Bi 4 Ti 3 o 12 ) is a lead-free ferroelectric material with a bismuth layered perovskite structure, which has a high Curie temperature, low dielectric constant, high stability, high magnetocrystalline anisotropy and excellent fatigue resistance, It is widely used in high temperature and high frequency electronic components, ferroelectric memory materials and other fields. With the gradual miniaturization and multifunctional development of the microelectronics field, the ferroelectric thin film used in memory requires high remnant polarization, small coercive field and low leakage curre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G51/00C04B41/89
CPCC01G51/40C04B41/52C04B41/89C04B41/009C01P2004/20C04B32/00C04B41/5025C04B41/4554
Inventor 段宗范梅云赵园欣赵高扬
Owner XIAN UNIV OF TECH
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