Heterojunction solar cell with plated seed layer prepared by in-situ reduction, and preparation method thereof

Abstract

The invention discloses a heterojunction solar cell with a plated seed layer prepared by in-situ reduction, and a preparation method thereof. The heterojunction solar cell comprises an N-type monocrystalline silicon substrate layer; an intrinsic amorphous silicon film; a P-type amorphous silicon film; an N-type amorphous silicon film; a transparent conductive film; a plated metal electrode which comprises a metal seed layer formed on the transparent conductive film by electrochemical in-situ reduction; and a metal conducting layer plated on the surface of the metal seed layer. Compared with atraditional plated electrode preparation method, the method can significantly reduce process complexity, forms a seed layer by an electrochemical method, improves interface adhesion characteristics, reduces interface contact resistance, improves the performance of the heterojunction solar cell, and achieve high efficiency and low cost.

Description

technical field [0001] The invention relates to a heterojunction solar cell for preparing an electroplating seed layer by in-situ reduction and a preparation method thereof, and belongs to the field of heterojunction solar cells. Background technique [0002] The energy crisis has aroused people's concern more and more, and environmental pollution has also produced a threat to people's lives. The more urgent problem at present is to develop some new green energy, such as solar energy, wind energy, nuclear energy, biological energy and so on. In modern society, with the rapid growth of the world's population, all countries are vigorously developing technology and economy, and no matter which aspect of development requires energy supply, human demand for it is increasing day by day. Under such a social background, the way of promoting economic development has also undergone tremendous changes, improving the level of manufacturing technology and improving the quality of life of...

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Problems solved by technology

[0007] The most commonly used methods for preparing metal seed layers at present: physical vapor deposition (including PVD, sputtering, etc.), chemical vapor deposition, inkjet printing, printing, spraying, electroplating, electroless plating, etc., but the above-mentioned traditional methods for forming seed layers The process is relatively complicated and there are many consumables. The present invention starts from the direction of improving the contact characteristics between the transparent conductive film and the metal electrode, simplifying the process, and lowering the cost, and realizes the process of using the electrochemical reduction method to prepare the metal seed layer. has obvious advantages in

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