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bi 2 s 3 @cu 2 Preparation method of o@cu micro-nano heterostructures

A heterogeneous structure, micro-nano technology, applied in the field of composite materials, can solve problems such as narrow band gap, restricted application, poor stability, etc., and achieve the effect of promoting separation, increasing absorption rate, and enhancing performance

Active Publication Date: 2022-05-10
CHONGQING JIAOTONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the narrow band gap, the photogenerated carriers are easy to recombine, and the stability is poor, which restricts its application in the field of photocatalysis.

Method used

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  • bi  <sub>2</sub> s  <sub>3</sub> @cu  <sub>2</sub> Preparation method of o@cu micro-nano heterostructures
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  • bi  <sub>2</sub> s  <sub>3</sub> @cu  <sub>2</sub> Preparation method of o@cu micro-nano heterostructures

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preparation example Construction

[0025] Bi of this embodiment 2 S 3 @Cu 2 The preparation method of O@Cu micro-nano heterostructure comprises the following steps: 2 S 3 Nanowire composite copper oxide in Bi 2 S 3 Copper oxide and simple copper are grown on the surface to form Bi 2 S 3 @Cu 2 The heterostructure of O@Cu; due to its ideal bandgap width and effective absorption of solar energy, it can generate a large number of photogenerated carriers-electron-hole pairs. In addition, the existence of a small amount of Cu simple substance makes the material have a plasmonic effect and effectively enhance the utilization of infrared light. By compounding Bi with different energy levels 2 S 3 and Cu 2 The two semiconductors of O and Cu single substance can effectively increase the absorption rate of solar energy and inhibit the recombination rate of photogenerated electron pairs, so as to achieve the purpose of improving material performance. Bi prepared by the present invention 2 S 3 @Cu 2 O@Cu micr...

Embodiment 1

[0037] Bi in this example 2 S 3 @Cu 2 The preparation method of O@Cu micro-nano heterostructure comprises the following steps:

[0038] a1. add 0.048g Bi(NO 3 ) 3 ·5H 2 O and 0.96g Na 2 S·9H 2 0, then add 3g lithium nitrate and 6g potassium nitrate, then add 5ml water, then seal the polytetrafluoroethylene container to prevent evaporation of water; shake the reaction container until the reactants are fully mixed, put into the muffle furnace and heat up To 200°C, react for 72h;

[0039] a2. Take out the reaction vessel and cool it to room temperature, then wash and filter the obtained precipitate with cold deionized water, repeat several times, and collect the precipitate; dry the washed precipitate at 60°C, and the obtained product is Bi 2 S 3 nanowires (such as figure 1 ), then Bi 2 S 3 Nanowires dispersed in solution to form Bi 2 S 3 The precursor solution is ready for use;

[0040] b. Add 2g of copper acetate and 200ml of water into the beaker, stir for 1 ho...

Embodiment 2

[0043] Bi in this example 2 S 3 @Cu 2 The preparation method of O@Cu micro-nano heterostructure comprises the following steps:

[0044] a1. add 0.048g Bi(NO 3 ) 3 ·5H 2 O and 0.96g Na 2 S·9H 2 O, add 3g of lithium nitrate and 6g of potassium nitrate, then add 5ml of water, then seal the polytetrafluoroethylene container to prevent evaporation of water; shake the medium reaction container until the reactants are fully mixed, and put it into the muffle furnace Raise the temperature to 200°C and react for 72 hours;

[0045] a2. Take out the reaction vessel and cool it down to room temperature, then wash the obtained precipitate with cold deionized water and filter, repeat several times, and collect the precipitate; finally, dry the washed precipitate at 60°C to obtain the product Namely Bi 2 S 3 nanowires (such as figure 1 ), then Bi 2 S 3 Nanowires dispersed in solution to form Bi 2 S 3 The precursor solution is ready for use;

[0046] b. Add 2g of copper acetate...

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Abstract

The invention discloses a Bi 2 S 3 @Cu 2 The preparation method of O@Cu micro-nano heterostructure comprises the following steps: 2 S 3 Nanowire composite copper oxide in Bi 2 S 3 Copper oxide and copper element are grown on the surface to form Bi 2 S 3 @Cu 2 Heterostructure of O@Cu; Bi with different energy levels by recombination 2 S 3 and Cu 2 The two semiconductors of O and Cu can effectively increase the absorption rate of solar energy and inhibit the recombination rate of photogenerated electron pairs, so as to improve the performance of the material, and control the density and shape of the heterojunction by adjusting the proportion of reaction raw materials and reaction time. and scale. The process is simple, the reaction temperature is relatively low, the reaction conditions are easy to control, the cost is low, and the operation is simple. No surfactant and organic auxiliary agent are used in the preparation process, and non-toxic and conventional raw materials and reagents are used in the reaction process. The production cost is low and environmentally friendly.

Description

technical field [0001] The invention relates to the field of composite materials, in particular to a Bi 2 S 3 @Cu 2 Preparation method of O@Cu micro-nano heterostructure. Background technique [0002] The most widely studied nano-semiconductor catalyst is TiO 2 (P25), but due to TiO 2 The bandgap width is 3.2eV, and it can only absorb light in the ultraviolet band, which accounts for about 5% of the solar spectrum, which greatly reduces its catalytic efficiency. In order to absorb more sunlight and improve photocatalytic efficiency, narrow-bandgap semiconductors have received extensive attention and attention. Common narrow-bandgap semiconductor materials include WO 3 , Fe 2 o 3 Wait. However, the photocatalytic performance is not only determined by the bandgap width of the semiconductor, but also related to the relative position of the semiconductor energy band and the hydrogen-oxygen energy level in the solution, and a single photocatalyst is difficult to meet this...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/04B01J37/10B01J37/03B82Y30/00B82Y40/00
CPCB01J27/04B01J37/10B01J37/031B01J35/004B01J35/0033B82Y30/00B82Y40/00
Inventor 李晓燕段春旭郎军张朝良
Owner CHONGQING JIAOTONG UNIVERSITY