Single crystal copper foil and preparation method thereof

Abstract

The invention provides a single crystal copper foil and a preparation method thereof. The method comprises: placing a copper foil in an oxidizing gas atmosphere, and pre-oxidizing to completely oxidize the surface of the copper foil; and placing the copper foil with the completely oxidized surface in a reducing gas atmosphere, and reducing to obtain the single crystal copper foil. According to thepresent invention, the obtained single crystal copper foil can be directly used as a graphene growth substrate to achieve the growth of graphene, such that the wrinkle problem caused by the multipleoperations of the copper foil can be avoided so as to improve the performances of graphene; the obtained single crystal copper foil can further be specially used for the pretreatment of copper foil substrates to achieve the large-batch preparation of single crystal copper substrates so as to be used in other applications; and the method can achieve the rapid, batch, low-cost and large-area copperfoil surface pretreatment, and has good industrialization prospect.

Description

technical field

[0001] The invention relates to material preparation technology, in particular to a single crystal copper foil and a preparation method thereof. Background technique

[0002] Copper foil is an effective substrate and catalyst for growing graphene, and high-quality graphene samples can be prepared by chemical vapor deposition (CVD). The orientation of copper foil, grain boundaries and other properties will affect the domain size, morphology, cleanliness and photoelectric properties of graphene to a certain extent. The preparation of single crystal copper foil can significantly reduce the influence of grain boundaries on graphene, and the graphene grown on single crystal copper foil can achieve seamless splicing. In addition, the rapid preparation of single crystal copper foil is of great significance for the preparation of copper foil-based two-dimensional materials such as graphene and boron nitride. At present, the commonly used copper foil single crystall...

Examples

preparation example Construction

[0022] One aspect of the present invention provides a method for preparing single crystal copper foil, comprising: placing the copper foil in an oxidizing gas atmosphere for pre-oxidation treatment to completely oxidize the surface of the copper foil; placing the fully oxidized copper foil on the surface in a reducing Reduction treatment was carried out in an inert gas atmosphere to obtain single crystal copper foil.

[0023] According to the present invention, the copper foil is used as an effective substrate and catalyst for growing graphene, and a high-quality graphene sample can be prepared by a chemical vapor deposition (CVD) method. The orientation of copper foil, grain boundaries and other properties will affect the performance of graphene to a certain extent. The preparation of single crystal copper foil can significantly reduce the influence of grain boundaries on graphene, and the graphene grown on single crystal copper foil can achieve seamless splicing. Existing c...

Embodiment 1

[0035] Put ordinary commercially available copper foil (purchased from Kunshan Luzhifa Electronic Technology Co., Ltd.) together with the carrier into the tube furnace, pass air into it and pre-oxidize at 300°C for 60 minutes to completely oxidize the surface of the copper foil , the organic matter attached to the copper foil surface is oxidatively decomposed and desorbed. Then, hydrogen gas is introduced into the tube furnace, and the temperature is raised to 1000°C. After reduction treatment for 30 minutes, the copper oxide on the surface of the copper foil is completely reduced to obtain a single crystal copper foil with a single crystal size of 10 cm.

Embodiment 2

[0037] Put ordinary commercially available copper foil (the copper foil is purchased from Kunshan Luzhifa Electronic Technology Co., Ltd.) together with the carrier into the tube furnace, pass air into it and pre-oxidize at 400°C for 30 minutes to completely oxidize the surface of the copper foil , the organic matter attached to the copper foil surface is oxidatively decomposed and desorbed. Then, hydrogen gas is introduced into the tube furnace, and the temperature is raised to 800°C. After reduction treatment for 5 minutes, the copper oxide on the surface of the copper foil is completely reduced to obtain a single crystal copper foil with a single crystal size of 11 cm.

technical field

[0001] The invention relates to material preparation technology, in particular to a single crystal copper foil and a preparation method thereof. Background technique

[0002] Copper foil is an effective substrate and catalyst for growing graphene, and high-quality graphene samples can be prepared by chemical vapor deposition (CVD). The orientation of copper foil, grain boundaries and other properties will affect the domain size, morphology, cleanliness and photoelectric properties of graphene to a certain extent. The preparation of single crystal copper foil can significantly reduce the influence of grain boundaries on graphene, and the graphene grown on single crystal copper foil can achieve seamless splicing. In addition, the rapid preparation of single crystal copper foil is of great significance for the preparation of copper foil-based two-dimensional materials such as graphene and boron nitride. At present, the commonly used copper foil single crystall...

Examples

preparation example Construction

[0022] One aspect of the present invention provides a method for preparing single crystal copper foil, comprising: placing the copper foil in an oxidizing gas atmosphere for pre-oxidation treatment to completely oxidize the surface of the copper foil; placing the fully oxidized copper foil on the surface in a reducing Reduction treatment was carried out in an inert gas atmosphere to obtain single crystal copper foil.

[0023] According to the present invention, the copper foil is used as an effective substrate and catalyst for growing graphene, and a high-quality graphene sample can be prepared by a chemical vapor deposition (CVD) method. The orientation of copper foil, grain boundaries and other properties will affect the performance of graphene to a certain extent. The preparation of single crystal copper foil can significantly reduce the influence of grain boundaries on graphene, and the graphene grown on single crystal copper foil can achieve seamless splicing. Existing c...

Embodiment 1

[0035] Put ordinary commercially available copper foil (purchased from Kunshan Luzhifa Electronic Technology Co., Ltd.) together with the carrier into the tube furnace, pass air into it and pre-oxidize at 300°C for 60 minutes to completely oxidize the surface of the copper foil , the organic matter attached to the copper foil surface is oxidatively decomposed and desorbed. Then, hydrogen gas is introduced into the tube furnace, and the temperature is raised to 1000°C. After reduction treatment for 30 minutes, the copper oxide on the surface of the copper foil is completely reduced to obtain a single crystal copper foil with a single crystal size of 10 cm.

Embodiment 2

[0037] Put ordinary commercially available copper foil (the copper foil is purchased from Kunshan Luzhifa Electronic Technology Co., Ltd.) together with the carrier into the tube furnace, pass air into it and pre-oxidize at 400°C for 30 minutes to completely oxidize the surface of the copper foil , the organic matter attached to the copper foil surface is oxidatively decomposed and desorbed. Then, hydrogen gas is introduced into the tube furnace, and the temperature is raised to 800°C. After reduction treatment for 5 minutes, the copper oxide on the surface of the copper foil is completely reduced to obtain a single crystal copper foil with a single crystal size of 11 cm.

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