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Semiconductor structure and forming method thereof

一种半导体、互连结构的技术，应用在半导体器件、半导体/固态器件制造、半导体/固态器件零部件等方向，达到防止漏电、提高性能的效果

Inactive Publication Date: 2019-09-13
SEMICON MFG INT (BEIJING) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, current leakage is prone to occur between the multilayer interconnection structures formed by the prior art

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] As mentioned in the background, electric leakage is prone to occur between multilayer interconnection structures.

[0024] figure 1 A schematic diagram of a semiconductor structure.

[0025] Please refer to figure 1 , the substrate 100; the first dielectric layer 101 on the substrate 100, the first dielectric layer 101 includes a first area A and a second area B located on both sides of the first area A, the first area of ​​the first area A There is a first interconnection part 102a in the dielectric layer 101, and there is a second interconnection part 102b in the first dielectric layer 101 of the second region B; The stop layer 105 on the surface of the second interconnection part 102b and the second dielectric layer 103 located on the surface of the stop layer 105, the interconnection exposing the top of the first interconnection part 102a in the second dielectric layer 103 and the stop layer 105 Structure 104.

[0026] In the above semiconductor structure, the i...

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PUM

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Abstract

The invention provides a semiconductor structure and a forming method thereof. The forming method comprises the following steps that a substrate is provided, wherein a first dielectric layer is arranged on the substrate; the first dielectric layer is provided with a first region and a second region positioned on the two sides of the first region; a first opening is formed in the first dielectric layer of the first region, and a second opening is formed in the first dielectric layer of the second region; a first interconnection part is formed in the first opening; a second interconnection partis formed in the second opening, and the top surface of the second interconnection part is lower than that of the first dielectric layer; a second dielectric layer is formed on the first interconnection part, the second interconnection part and the first dielectric layer; a third opening is formed in the second dielectric layer, and the first interconnection part is exposed at the bottom of the third opening; and an interconnection structure is formed in the third opening. The device formed by the method is relatively high in performance.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor device manufacturing technology, semiconductor devices already have deep submicron structures. As the number of devices contained in integrated circuits continues to increase, and the size of devices continues to shrink due to the increase in integration, the high-performance, high-density connections between devices are not only performed in a single interconnection layer, but also in multiple layers. interconnection between. Therefore, a multilayer interconnection structure is generally provided in which a plurality of interconnection layers are stacked on each other with an interlayer insulating film interposed therebetween for connecting semiconductor devices. In particular, a multi-layer interconnection structure formed by a dual-damas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/522H01L23/528
CPCH01L21/76838H01L23/5226H01L23/528H01L21/76834H01L21/76883H01L21/76897H01L21/31144H01L21/3212H01L21/32134H01L21/76807H01L21/7684H01L21/76877H01L23/481H01L23/53214H01L23/53228
Inventor 宋兴华
Owner SEMICON MFG INT (BEIJING) CORP