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Semiconductor device test structure and formation method thereof, and test method of semiconductor device

A technology for testing structures and testing methods, which is applied in semiconductor/solid-state device testing/measurement, instrumentation, electrical measurement, etc., and can solve problems such as the inability to test the formation position of metal structures

Active Publication Date: 2019-09-17
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current test structure cannot test whether the formation position of the metal structure in the semiconductor device manufacturing process is accurate

Method used

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  • Semiconductor device test structure and formation method thereof, and test method of semiconductor device
  • Semiconductor device test structure and formation method thereof, and test method of semiconductor device
  • Semiconductor device test structure and formation method thereof, and test method of semiconductor device

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Experimental program
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Embodiment Construction

[0038] As mentioned above, the existing test structure cannot test whether the formation position of the metal structure in the semiconductor device manufacturing process is accurate.

[0039] figure 1 is a schematic diagram of a test structure, which shows a part of the combination of comb-shaped metal structures, and those skilled in the art can understand that, figure 1 The comb-like structure in can extend bidirectionally along the AA' direction. figure 1 The two comb-like structures in the metal structure are occlusally distributed, and the distance between the comb teeth in one metal structure and the adjacent comb teeth on both sides is equal, that is, the distance 11 is equal to the distance 12, and the distance 13 is equal to the distance 14. This evenly distributed layout is ideally the target layout. The ideal situation here refers to the situation where there is no deviation in the formation position of the metal structure.

[0040] However, if the accuracy of t...

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PUM

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Abstract

The embodiment of the invention discloses a semiconductor device test structure and a formation method thereof, and a test method of a semiconductor device. The test method of the semiconductor device comprises the steps of: respectively applying voltages to first metal structures and second metal structures in first metal structure combination and second metal structure combination, wherein the first metal structure combination and the second metal structure combination are isolated from each other and both comprise the first metal structures and the second metal structures which are located in the same dielectric layer and are insulated from each other, the first metal structures and the second metal structures both comprise combinations of parallel first parallel structures in parallel and combinations of parallel second parallel structures in parallel, and the combinations of the first parallel structures and the combinations of the second parallel structures are distributed in a crossed and parallel mode. According to the technical scheme in the embodiment of the invention, the accuracy of the forming position of the metal structure can be determined through adoption of the method.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor device testing structure, forming method and testing method. Background technique [0002] Miniaturization is a development trend in the field of semiconductor technology, and more and more devices can be integrated on a wafer per unit area. The devices on the wafer are interconnected through metal structures on the dielectric layer, and ensuring the insulation between each metal structure is an important technical problem in the field of semiconductor technology. [0003] During the process of forming the metal structures, if the formation positions of the metal structures are deviated, the distance between the metal structures will be changed, thereby resulting in the deterioration of the insulation between the metal structures. [0004] Generally, semiconductor devices can be tested through a test structure, for example, time-dependent breakdown voltage (Time Dep...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCG01R31/2601H01L22/14H01L22/32H01L22/34
Inventor 冯军宏
Owner SEMICON MFG INT (SHANGHAI) CORP
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