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All-electrically regulated multifunctional spin-orbit torque device and preparation method

A spin-orbit and spin-orbit coupling technology is applied in the field of spintronics, which can solve the problems of increasing the complexity of device design and miniaturizing device power consumption.

Active Publication Date: 2020-10-20
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the multifunctionality of most spin-orbit torque devices cannot be achieved without the assistance of an external magnetic field, which increases the complexity of device design, device power consumption, and the difficulty of device miniaturization.

Method used

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  • All-electrically regulated multifunctional spin-orbit torque device and preparation method
  • All-electrically regulated multifunctional spin-orbit torque device and preparation method
  • All-electrically regulated multifunctional spin-orbit torque device and preparation method

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preparation example Construction

[0051] In the first exemplary embodiment of the present disclosure, a method for preparing a fully electrically regulated multifunctional spin-orbit torque device is also provided. figure 2 It is a flow chart of the preparation method of the all-electrically regulated multifunctional spin-orbit torque device according to the embodiment of the present invention. Such as figure 2 shown, including:

[0052] Put the semi-insulating GaAs(001) substrate into the MBE preparation chamber, and the vacuum degree of the chamber is higher than 2×10-7Pa. After degassing and deoxidation, the temperature of the substrate was raised to 560° C., and a GaAs smooth layer was deposited with a growth rate of 10 nm / min and a thickness of 200 nm.

[0053] Lower the temperature of the substrate to 150-250°C to grow a ferrimagnetic binary alloy D0 with perpendicular magnetic anisotropy 22 -Mn 3 Ga, with a growth rate of about 1nm / min and a thickness of 40nm, raised to 300°C and kept for 20min to...

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Abstract

The present disclosure provides an all-electrically regulated multifunctional spin-orbit torque device, which is fabricated sequentially, including: a substrate, a smooth layer, a vertical easy-magnetization layer, a heavy metal layer, an in-plane easy-magnetization layer, and a covering layer; the vertical The material of the easy magnetization layer is a perpendicular magnetic anisotropy Mn-based ferromagnetic metal or ferrimagnetic metal, including L1 0 ‑MnGa, L1 0 -MnAl, D0 22 -Mn 3 Ga or D0 22 -Mn 3 One or more of Ge; the thickness of the vertical easy magnetization layer is 1-4 nm; the easy magnetization axis of the vertical easy magnetization layer is along the out-of-plane direction. Under the condition of not relying on an external magnetic field, the present disclosure can not only realize the spin-orbit torque flipping of full electrical control, but also has the characteristics of low power consumption, multi-function, high reliability and the like. It also has the characteristics of high response speed, long life, high thermal stability, and multi-function, and is very suitable for developing high-speed spin memory devices and programmable spin logic devices.

Description

technical field [0001] The present disclosure relates to the field of spin electronics, in particular to an all-electrically regulated multifunctional spin-orbit torque device and a preparation method. Background technique [0002] The spin-orbit torque (SOT) effect provides a new mechanism to efficiently control the magnetic moment at the micro-nano scale through an all-electrical method, which brings new opportunities for the development of next-generation low-power and non-volatile spintronic devices. opportunity. For example, magnetic random access memory (MRAM) based on the SOT effect can realize all-electrical data writing and reading, and has the advantages of non-volatility, high response speed, high density, high stability and strong process compatibility. Compared with traditional magnetic drive type and spin transfer torque (STT) type MRAM, it has great advantages. In addition, the spin-orbit torque device has remarkable multifunctional characteristics, which is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/04H01L43/06H01L43/14
CPCH10N52/80H10N52/00H10N52/01
Inventor 赵旭鹏赵建华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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