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Monoclinic comparison device and cmos image sensor including the same

A technology of comparison device and comparison circuit, which is applied in image communication, electric solid-state devices, semiconductor devices, etc.

Active Publication Date: 2021-10-01
SK HYNIX INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if a continuous-time signal becomes a discrete-time signal in the middle of an analog-to-digital conversion, unwanted noise can be generated due to coupling between adjacent columns

Method used

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  • Monoclinic comparison device and cmos image sensor including the same
  • Monoclinic comparison device and cmos image sensor including the same
  • Monoclinic comparison device and cmos image sensor including the same

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Embodiment Construction

[0016] figure 1 is a diagram illustrating an example of a CMOS image sensor. figure 1 The CMOS image sensor shown in has a column-parallel structure implemented using a single-slope analog-to-digital conversion device. The column-parallel architecture facilitates high-speed readout of large pixel arrays without consuming large amounts of power, and the single-slope analog-to-digital conversion device is well suited for column-parallel architecture because it can be implemented using very simple column circuitry, and Much smaller chip area is required than other types of analog-to-digital converters (ADCs). Various embodiments of the disclosed technology may reduce noise by multisampling pixel signals for column-parallel configurations using single-slope analog-to-digital conversion devices, or for other types of configurations using different types of analog-to-digital conversion devices.

[0017] refer to figure 1 The CMOS image sensor includes a pixel array 10 with imagin...

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Abstract

A monoclinic comparison device and a CMOS image sensor including the monoclinic comparison device. A comparison device includes: a multi-step pixel signal generating circuit coupled to a pixel to receive a pixel signal, and generates a multi-step pixel signal based on a multi-step trigger signal and a multi-step length control signal. a pixel signal; a comparison circuit, the comparison circuit is connected to the multi-step pixel signal generating circuit to compare the ramp signal with the multi-step pixel signal and output a comparison signal; and a control circuit, the control circuit is connected to the multi-step pixel signal The multi-step pixel signal generation circuit and the comparison circuit to detect the intersection of the multi-step pixel signal and the slope signal based on the comparison signal from the comparison circuit, and output the multi-step control signal to The multi-step pixel signal generation circuit.

Description

technical field [0001] The techniques and implementations disclosed in this patent document relate to complementary metal oxide semiconductor (CMOS) image sensors. Background technique [0002] As consumer demands for high-resolution, low-noise digital imaging applications continue to grow, CMOS image sensor manufacturers have been working on innovations in analog-to-digital conversion techniques, such as multi-sampling of the input signal, analog-to-digital conversion, and averaging. Multi-sampling technique. [0003] There is a trade-off relationship between the operation speed and power consumption of the CMOS image sensor. In this regard, the column-parallel structure is the best structure. However, there are difficulties in integrating readout circuitry such as an analog-to-digital converter (ADC) into narrow pixel widths. Therefore, simple single-slope ADCs are widely used in column-parallel architectures. [0004] Best performance is achieved when a single-slope A...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/357H04N5/374
CPCH04N25/76H04N25/78H04N25/616H04N25/67H04N25/618H01L27/14616H01L27/1461H04N25/75H04N25/60H04N25/772
Inventor 金贤俊金珉圭
Owner SK HYNIX INC
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