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Providing single data rate (SDR) mode or double data rate (DDR) mode for the command and address (CA) bus of registering clock drive (RCD) for dynamic random access memory (DRAM)

A single data rate, double data rate technology, applied in the field of command and address bus of memory devices, can solve the problems of degradation of signal integrity, increase of bus load, damage of signal integrity of CA input bus, etc.

Pending Publication Date: 2019-09-27
QUALCOMM INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the signal integrity of the CA input bus can be severely compromised due to path length, path noise, path attenuation, and path reflections (e.g., impedance mismatch), especially as clock rates increase
[0005] For example, signal integrity degradation may limit clock frequency scaling (i.e., running a clock frequency at a higher rate) to improve overall processing system performance
Also, signal integrity degradation can lead to sub-optimal signal alignment during DRAM initialization
Furthermore, signal integrity degradation may be exacerbated as multiple memory devices (e.g., DRAMs) are installed with a common CA bus, which may increase bus loading and cause further signal integrity degradation

Method used

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  • Providing single data rate (SDR) mode or double data rate (DDR) mode for the command and address (CA) bus of registering clock drive (RCD) for dynamic random access memory (DRAM)
  • Providing single data rate (SDR) mode or double data rate (DDR) mode for the command and address (CA) bus of registering clock drive (RCD) for dynamic random access memory (DRAM)
  • Providing single data rate (SDR) mode or double data rate (DDR) mode for the command and address (CA) bus of registering clock drive (RCD) for dynamic random access memory (DRAM)

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Embodiment Construction

[0025] The detailed description set forth below in conjunction with the accompanying drawings is intended as a description of various aspects of the present invention, and is not intended to represent the only aspect in which the present invention can be practiced. Each aspect described in the present invention is provided only as an example or illustration of the present invention, and should not necessarily be regarded as preferable or advantageous over other aspects. For the purpose of providing a thorough understanding of the present invention, the detailed description includes specific details. However, it will be obvious to those skilled in the art that the present invention can be practiced without these specific details. In some examples, well-known structures and devices are shown in block diagram form in order to avoid obscuring the concept of the present invention. Abbreviations and other descriptive terms may be used only for convenience and clarity, and are not in...

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Abstract

Aspects of the disclosure are directed to providing a single data rate (SDR) mode or a double data rate (DDR) mode to a Registering Clock Drive (RCD) for a memory. Accordingly, the apparatus and method may include determining data rate mode selection criteria; selecting a data rate mode based on the data rate mode selection criteria; configuring a host interface for the data rate mode; and configuring an RCD input interface for the data rate mode. In one aspect, the apparatus and method further include activating a clock signal on the host interface and on the RCD input interface; transferring data from the host interface to the RCD input interface using the clock signal; and transferring the data from an RCD output interface using the clock signal in either 1N mode or 2N mode. And, the data rate mode is one of the SDR mode or the DDR mode.

Description

[0001] Cross reference of related applications [0002] This application claims the pending U.S. Provisional Application No. 62 / 463,896 filed in the U.S. Patent and Trademark Office on February 27, 2017 and the non-provisional application No. 15 / 901,693 filed in the U.S. Patent and Trademark Office on February 21, 2018. Priority of the number, the entire content of the application is incorporated herein by reference. Technical field [0003] The present invention generally relates to the field of command and address (CA) buses of memory devices, and particularly relates to the provision of single data to the command and address (CA) bus of a registered clock driver (RCD) for dynamic random access memory (DRAM) Speed ​​(SDR) mode or double data rate (DDR) mode. Background technique [0004] Dynamic Random Access Memory (DRAM) technology can use double data rate (DDR) mode on the addressing mechanism (for example, the registered clock driver (RCD) from the host's command / address (CA)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F13/16
CPCG06F13/1678G06F3/0604G06F3/0634G06F3/0659G06F3/0673
Inventor 王力永K·S·贝恩斯W·奎因
Owner QUALCOMM INC
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