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Pixel unit circuit, image processing method and storage medium

A pixel unit and circuit technology, applied in the field of image processing, can solve the problems of wasting incident light usage rate and increasing pixel size, and achieve the effects of reducing pixel size, increasing usage rate, and increasing the amount of incoming light.

Active Publication Date: 2019-10-08
GUANGDONG OPPO MOBILE TELECOMM CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing CMOS image sensor absorbs different colors by selecting color filters of different colors. It is necessary to add a filter to the photodiode (PD, Photo Diode) structure, thereby increasing the pixel size, and each pixel can only Absorb monochromatic light, which greatly wastes the utilization rate of incident light

Method used

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  • Pixel unit circuit, image processing method and storage medium
  • Pixel unit circuit, image processing method and storage medium
  • Pixel unit circuit, image processing method and storage medium

Examples

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Embodiment 1

[0042] An embodiment of the present application provides a pixel unit circuit, which is applied to a CMOS image sensor, such as figure 2 As shown, the pixel unit circuit includes:

[0043] A photodiode PD column, the PD column includes three sizes corresponding to RGB, which are used to respectively absorb RGB monochromatic light and RGB combined light, and convert the corresponding optical signal into an electrical signal;

[0044] The CMOS pixel readout circuit connected to the PD column is used to amplify the electrical signal and read out the electrical signal.

[0045] The pixel unit circuit provided by the embodiment of the present application is applicable to a scene where a CMOS image sensor is used to process an image of a collected light signal to obtain an image corresponding to the light signal.

[0046] In the embodiment of the present application, the CMOS image sensor is composed of a pixel unit circuit and a CMOS circuit, wherein the pixel unit circuit is use...

Embodiment 2

[0078] An embodiment of the present application provides an image processing method, which is applied to a CMOS image sensor composed of a pixel unit circuit. The pixel unit circuit includes a PD column and a CMOS pixel readout circuit connected to the PD column, such as Figure 6 As shown, the method includes:

[0079] S101. Using PD columns to respectively absorb RGB monochromatic light and RGB combined light, and convert corresponding optical signals into electrical signals.

[0080] An image processing method provided in an embodiment of the present application is applicable to a scenario where a CMOS image sensor is used to perform image processing on a collected optical signal to obtain an image corresponding to the optical signal.

[0081] In the embodiment of the present application, the CMOS image sensor is composed of a pixel unit circuit and a CMOS circuit, wherein the pixel unit circuit is used to convert the collected optical signal into an electrical signal and r...

Embodiment 3

[0104] An embodiment of the present application provides a storage medium on which a computer program is stored. The computer-readable storage medium stores one or more programs. The one or more programs can be executed by one or more processors and applied to pixel In the unit circuit, the computer program realizes the image processing method described in the second embodiment.

[0105] Specifically, when the program instructions corresponding to an image processing method in this embodiment are read or executed by an electronic device, the following steps are included:

[0106] Use the PD column to absorb RGB monochromatic light and RGB combined light respectively, and convert the corresponding optical signal into an electrical signal;

[0107] The electrical signal is amplified by the CMOS pixel readout circuit, and the electrical signal is read out.

[0108] In an embodiment of the present invention, further, the PD column includes: a combined PD column, the combined PD c...

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Abstract

The embodiment of the invention provides a pixel unit circuit, an image processing method and a storage medium. The pixel unit circuit is applied to a CMOS image sensor, and comprises: a photodiode PDcolumn which comprises three sizes corresponding to RGB and is used for respectively absorbing RGB monochromatic light and RGB combined light and converting corresponding optical signals into electric signals; and a CMOS pixel reading circuit which is connected with the PD column and is used for amplifying the electric signal and reading the electric signal.

Description

technical field [0001] The present application relates to the field of image processing, and in particular to a pixel unit circuit, an image processing method, and a storage medium. Background technique [0002] Bayer color filter is a mosaic color green array formed by arranging RGB color filters on the grid of light sensing components. Practical single-chip digital image sensors such as digital cameras, video recorders, and scanners mostly use this specific arrangement of green arrays to produce color images, such as figure 1 As shown, 50% of this color filter arrangement is green, 25% is red, and the other 25% is blue, so it is also called RGBG, GRGB or RGGB. [0003] The existing CMOS image sensor absorbs different colors by selecting color filters of different colors. It is necessary to add a filter to the photodiode (PD, Photo Diode) structure, thereby increasing the pixel size, and each pixel can only Absorbing monochromatic light greatly wastes the utilization rate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/374H04N5/378H04N5/369
CPCH04N25/70H04N25/76H04N25/75
Inventor 杨鑫
Owner GUANGDONG OPPO MOBILE TELECOMM CORP LTD