Polishing composition, method for producing same, and polishing method using polishing composition

A composition and compound technology, used in polishing compositions containing abrasives, grinding machine tools, manufacturing tools, etc., can solve the problems of reduced flatness of silicon wafers, and the metamorphic layer is not easy to be ground, and achieves the effect of eliminating performance

Active Publication Date: 2019-10-08
FUJIMI INCORPORATED
View PDF17 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When a degenerated layer is formed, if pre-polishing such as primary polishing is performed, the degenerated layer is less likely to be polished, and swelling occurs on the periphery of the laser hard mark, which may reduce the flatness of the silicon wafer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing composition, method for producing same, and polishing method using polishing composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0078] The present invention will be described in more detail using the following examples and comparative examples. However, the scope of protection of the present invention should not be limited only to the following examples. In addition, "%" and "part" represent "mass%" and "mass part", respectively, unless there is special mention. In addition, in the following examples, unless otherwise specified, the operation was carried out under the conditions of room temperature (25° C.) / relative humidity 40 to 50% RH.

[0079]

[0080] (Polishing composition A1)

[0081] With the content of colloidal silica (average primary particle diameter 55nm) being 9% by mass, potassium carbonate (K 2 CO 3 ) content of 1.7% by mass, tetramethylammonium hydroxide (TMAH) content of 2.5% by mass, ethylenediaminetetra(methylenephosphonic acid) (EDTPO) content of 0.1% by mass, styrene-malay Acid anhydride copolymer (weight-average molecular weight: 9500, styrene / maleic anhydride (S / M) = 3 / 1) ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

[Problem] To provide a polishing composition having excellent performance of eliminating protrusions formed on the periphery of a hard laser mark. [Solution] A polishing composition comprising abrasive grains, a water-soluble polymer, a basic compound and water, wherein the water-soluble polymer is a copolymer containing a structural unit derived from styrene or a derivative thereof and a structural unit derived from a monomer other than the aforementioned compound.

Description

technical field [0001] The present invention relates to a polishing composition, a method for producing the polishing composition, and a polishing method using the polishing composition. Background technique [0002] Conventionally, the surface of materials such as metals, semimetals, nonmetals, and oxides thereof has been subjected to precision polishing using polishing compositions. For example, the surface of a silicon wafer used as a component of a semiconductor product is usually processed into a high-quality mirror surface through a lapping process and a polishing process (precision polishing process). The above-mentioned polishing process typically includes a pre-polishing process (pre-grinding process) and a final polishing process (final grinding process). [0003] Silicon wafers are sometimes marked with barcodes, numerals, symbols, etc. (laser hard marks) by irradiating laser light on the front and rear surfaces of the silicon wafer for identification purposes. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09K3/14B24B37/00C09G1/02H01L21/304
CPCB24B37/00C09G1/02C09K3/1463H01L21/02024H01L21/304
Inventor 森嘉男谷口惠向井贵俊土屋公亮
Owner FUJIMI INCORPORATED
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products