A kind of LED point light source based on graphene/zno nanowire/p-gan film and preparation method thereof

Abstract

The invention discloses an LED point light source based on graphene / ZnO nanowire / P-GaN film, and a preparation method thereof. The LED point light source comprises a growth substrate, a P-GaN film layer, a positive electrode, an insulation layer, a groove, a ZnO nanowire, a negative electrode and a single-layer graphene; a single ZnO nanowire is placed in the groove on the P-GaN film layer to forma ZnO nanowire / P-GaN heterojunction; and, the single-layer graphene covers on the ZnO nanowire and the negative electrode. The contact area between the single-layer graphene and the ZnO nanowire is large, so as to increase the carrier injection area and improve the injection efficiency; and at the same time, the ZnO nanowire is not damaged by the device produced by the method, so that the luminous efficiency is greatly improved. The nanoscale point light source is formed on one end of the ZnO nanowire, so that the size of the photoelectronic device is effectively reduced; and thus, the LED point light source provided by the invention is widely applied to the fields of precise monolithic integration of the photoelectronic device, ultrahigh resolution biomedicine, supercapacitor informationstorage, and so on.

Description

technical field [0001] The invention relates to the field of semiconductor optics, in particular to an LED point light source based on a graphene / single ZnO nanowire / p-GaN film vertical structure and a preparation method thereof. Background technique [0002] Zinc oxide (ZnO) is a II-VI direct bandgap semiconductor with a forbidden band width of 3.37eV, a large exciton binding energy (60meV) at room temperature, a low growth temperature, and stable chemical properties. When its size is nanoscale, it often exhibits unique photoactivity, electrical activity and catalytic activity, and these properties have important application prospects in the field of optoelectronic devices. Because p-ZnO is difficult to synthesize, p-GaN, which is also a wurtzite structure, is often used in devices to contact ZnO to form a heterojunction. Gallium nitride (GaN) is a group III-V direct bandgap semiconductor with a forbidden band width of 3.39eV, which is often used in blue light emitting or ...

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Problems solved by technology

This process involves ion etching, which inevitably causes great damage to the ZnO rods, thus affecting the electroluminescence performance of the heterojunction.

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