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High-robustness bidirectional SCR device capable of inhibiting current saturation effect

A high-robust, current-suppressing technology, applied in electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of increasing device resistance and reducing DDSCR protection capability, and achieves the suppression of resistance increase, high protection capability, The effect of reducing the resistance value

Active Publication Date: 2019-10-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, when the current is large, the DDSCR device has a current saturation effect, and its TLP test results are as follows: figure 2 As shown; when the current saturation of the DDSCR device occurs, the resistance of the device increases, which reduces the protection capability of the DDSCR

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  • High-robustness bidirectional SCR device capable of inhibiting current saturation effect
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  • High-robustness bidirectional SCR device capable of inhibiting current saturation effect

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Embodiment Construction

[0021] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0022] This embodiment provides a highly robust bidirectional SCR device capable of suppressing the current saturation effect, and its device structure is as follows image 3 shown; specifically include:

[0023] The p-type silicon substrate 110; the n-type deep well region 140 formed on the p-type silicon substrate 110, its function is to isolate the SCR device above it from the p-type silicon substrate;

[0024] A p-type well region 150 formed on the n-type deep well region 140, two n-type well regions 120 and 130 are formed on the p-type well region 150; an n-type heavy Doped region 121, a p-type heavily doped region 122 and an n-type heavily doped region 123, an n-type heavily doped region 133, a p-type heavily doped region 131 are provided in the n-type well region 130 and an n-type heavily doped region 132; the n-type heavily doped re...

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Abstract

The invention belongs to the field of electrostatic discharge (ESD) protection of integrated circuits, and relates to a bidirectional SCR (selective catalytic reduction) device, in particular to a high-robustness bidirectional SCR device capable of inhibiting a current saturation effect, which is used for overcoming the current saturation effect of the conventional DDSCR device when the current islarge. According to the invention, on the basis of the traditional DDSCR device, an n-type heavily doped region is added in each of two n-type well regions and is directly connected to an electrode or is connected to the electrode through a resistor, so that a new path is added in the device, the resistance value of the device is reduced, and the current saturation effect of the device caused bythe increase of the resistance under the condition of the large current can be inhibited, and the higher protection capability can be achieved.

Description

technical field [0001] The invention belongs to the field of electrostatic discharge (Electrostatic Discharge, ESD for short) protection of integrated circuits, and specifically relates to an ESD protection structure device, especially a bidirectional silicon controlled rectifier SCR (Silicon Controlled Rectifier) ​​device, specifically a device capable of suppressing current Highly robust bidirectional SCR device for saturation effects. Background technique [0002] Electrostatic discharge is an event in which a finite amount of charge is transferred between two objects of different potentials. Since the invention of the first bipolar transistor and the birth of the first IC chip, electrostatic discharge has constituted a growing threat to the reliability of IC chips. Threat; the instantaneous high-voltage electrostatic pulse generated by ESD flows through the chip pins, causing damage to the internal circuit of the chip and making it unable to work normally; for integrated...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0262
Inventor 刘继芝黄美晨杜飞波刘志伟
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA