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bi 2 o 2 Se interface modified perovskite solar cell and preparation method

A technology for solar cells and interface modification, applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problems of poor stability, decomposition of perovskite films, low electron transfer rate, etc., to improve stability and charge separation, high conductivity effect

Active Publication Date: 2020-09-22
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Although the energy conversion efficiency of perovskite solar cells has made great progress, their poor stability is still an important problem that needs to be solved urgently
Titanium dioxide, the most commonly used electron transport layer material for perovskite solar cells, has a low electron transport rate and photocatalytic reaction occurs under ultraviolet light irradiation, which will lead to the decomposition of perovskite film

Method used

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  • bi <sub>2</sub> o <sub>2</sub> Se interface modified perovskite solar cell and preparation method
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  • bi <sub>2</sub> o <sub>2</sub> Se interface modified perovskite solar cell and preparation method

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Embodiment 1

[0030] A Bi of this embodiment 2 o 2 Se interface modified SnO 2 The perovskite solar cell device structure of the electron transport layer is: ITO / SnO 2 / Bi 2 o 2 Se / MAPbI 3 / Spiro-OMeTAD / MoO x / Ag. The specific preparation process is as follows:

[0031] (1) The ITO substrate was ultrasonically cleaned with detergent, deionized water, acetone, absolute ethanol, and isopropanol in sequence for 20 minutes, and then dried in a vacuum oven at 80°C. The surface of the cleaned and dried ITO substrate is subjected to plasma surface treatment for 10 minutes. This treatment method utilizes the strong oxidizing properties of ozone generated under microwaves to clean the residual organic matter on the ITO surface, while improving the work function of the ITO surface.

[0032] (2) Spin-coat electron transport layer SnO on the ITO surface treated in step (1) 2 , the interface modification layer is Bi 2 o 2 Se. SnO 2 SnO purchased for alfa 2 Aqueous colloid, diluted 5 times ...

Embodiment 2

[0042] A Bi of this embodiment 2 o 2 Se interface modified SnO 2 The perovskite solar cell device structure of the electron transport layer is: ITO / SnO 2 / Bi 2 o 2 Se / MAPbI 3 / Spiro-OMeTAD / MoO x / Ag. The specific preparation process is as follows:

[0043] (1) The ITO substrate was ultrasonically cleaned with detergent, deionized water, acetone, absolute ethanol, and isopropanol in sequence for 20 minutes, and then dried in a vacuum oven at 80°C. The surface of the cleaned and dried ITO substrate is subjected to plasma surface treatment for 10 minutes. This treatment method utilizes the strong oxidizing properties of ozone generated under microwaves to clean the residual organic matter on the ITO surface, while improving the work function of the ITO surface.

[0044] (2) Spin-coat electron transport layer SnO on the ITO surface treated in step (1) 2 , the interface modification layer is Bi 2 o 2 Se. SnO 2 SnO purchased for alfa 2 Aqueous colloid, diluted 5 times ...

Embodiment 3

[0048] A Bi of this embodiment 2 o 2 Se interface modified SnO 2 The perovskite solar cell device structure of the electron transport layer is: ITO / SnO 2 / Bi 2 o 2 Se / MAPbI 3 / Spiro-OMeTAD / MoO x / Ag. The specific preparation process is as follows:

[0049] (1) The ITO substrate was ultrasonically cleaned with detergent, deionized water, acetone, absolute ethanol, and isopropanol in sequence for 20 minutes, and then dried in a vacuum oven at 80°C. The surface of the cleaned and dried ITO substrate is subjected to plasma surface treatment for 10 minutes. This treatment method utilizes the strong oxidizing properties of ozone generated under microwaves to clean the residual organic matter on the ITO surface, while improving the work function of the ITO surface.

[0050] (2) Spin-coat electron transport layer SnO on the ITO surface treated in step (1) 2 , the interface modification layer is Bi 2 o 2 Se: SnO 2 SnO purchased for alfa 2 Aqueous colloid, diluted 5 times w...

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Abstract

The invention belongs to the field of perovskite solar cells and discloses a Bi 2 o 2 Se interface-modified perovskite solar cell and preparation method thereof. The perovskite solar cell includes a cathode substrate, an electron transport layer, an interface modification layer, a perovskite light absorbing layer, a hole transport layer and an anode layer stacked in sequence; the electron transport layer is SnO 2 film, the interface modification layer is Bi 2 o 2 Se, the perovskite light absorbing layer is MAPbI 3 . The present invention adopts Bi with high conductivity and high charge separation ability 2 o 2 As an interface modification layer, Se material can effectively reduce the recombination of carriers, improve the separation of charges, and ultimately improve the photoelectric conversion efficiency of perovskite solar cells. At the same time, the introduction of the interface modification layer can effectively improve the stability of the device.

Description

technical field [0001] The invention belongs to the field of perovskite solar cells, in particular to a Bi 2 o 2 Se interface-modified perovskite solar cell and preparation method thereof. Background technique [0002] Perovskite solar cells have the advantages of simple structure, high energy conversion efficiency, and easy solution method preparation. The energy conversion efficiency of perovskite solar cells has increased from 3.8% to 24.2% in just nine years of development, entering the ranks of high energy conversion efficiency solar cells. However, compared with commercialized silicon solar cells, perovskite solar cells still need to be improved in terms of stability. [0003] The working principle of perovskite solar cells is as follows: (1) light shines on the active layer through the transparent ITO electrode, and the perovskite light-absorbing layer absorbs photons to generate excitons; excitons diffuse to the interface; (2) holes pass through the hole The tran...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K30/15H10K2102/00Y02E10/549
Inventor 於黄忠陈金雲黄承稳巫祖萍侯春利王键鸣
Owner SOUTH CHINA UNIV OF TECH