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Power module fault protection circuit

A power module and fault protection technology, which is applied to emergency protection circuit devices, output power conversion devices, electrical components, etc., can solve the problems of bypass contactors that cannot be closed, bypass devices fail, and increase the cost of power modules. Avoid capacitor short circuits and internal arcs, low cost, low cost effect

Pending Publication Date: 2019-10-25
CSG EHV POWER TRANSMISSION +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method still cannot solve the problem that the bypass contactor cannot be closed due to its own mechanical failure
[0007] To sum up, none of the current solutions can solve the problem of failure of the bypass device caused by the mechanical failure of the bypass contactor itself, and additional control and power supply equipment are required, which significantly increases the cost of the power module

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Embodiment 1: as Figure 1-5 As shown, when the power module is a full-bridge power module, there are four IGBTs, and every two IGBTs are connected in series, and two groups of IGBTs in series are connected in parallel with the DC capacitor, and the two middle connection points of the two groups of series-connected IGBTs Lead out two lead-out lines as the module; among them, IGBT1 and IGBT2 are connected in series, IGBT3 and IGBT4 are connected in series, and then two groups of series-connected IGBTs are connected in parallel and connected in parallel with capacitor C1. The connection point of IGBT1 and IGBT2 leads to the module, and similarly, the connection point of IGBT3 and IGBT4 leads to the module. According to the present invention, a clamping circuit is designed for the driving circuits of IGBT2 and IGBT4, and the clamping voltage is obviously lower than the CE withstand voltage limit of the IGBT. However, the drivers of IGBT1 and IGBT3 do not include clamping ...

Embodiment 2

[0046] Example 2: Figure 4 It is another implementation of the present invention on a full-bridge power module. The power module in the figure includes four IGBTs: IGBT1, IGBT2, IGBT3, IGBT4, four IGBT's respective driving circuits, four diodes D1, D2, D3, D4, DC capacitor C1, bypass device, etc. Wherein, IGBT1 and IGBT2 are connected in series, IGBT3 and IGBT4 are connected in series, and then two groups of series connected IGBTs are connected in parallel, and connected in parallel with capacitor C1. The connection point of IGBT1 and IGBT2 leads to the module, and similarly, the connection point of IGBT3 and IGBT4 leads to the module. According to the present invention, a clamping circuit is designed for the driving circuits of IGBT1 and IGBT3, and the clamping voltage thereof is obviously lower than the CE withstand voltage limit of the IGBT. The drivers of IGBT2 and IGBT4 do not include clamping circuits. Therefore, when the CE voltage of IGBT1 or IGBT3 is higher than t...

Embodiment 3

[0047] Example 3: Figure 5 Shown is another implementation of the present invention on a full-bridge power module. exist Figure 7 In the implementation shown, the four IGBT driving currents of the full-bridge power module all include clamping circuits, wherein the thresholds of the clamping circuits of IGBT1 and IGBT3 are the same, and the thresholds of the clamping circuits of IGBT2 and IGBT4 are the same. The clamping circuit thresholds of IGBT1 and IGBT3 can be set relatively low to ensure that IGBT1 and IGBT3 will be damaged and breakdown after module verification failure, and form a flow channel for system current. It is also possible to set the clamping circuit thresholds of IGBT2 and IGBT4 relatively low to ensure that IGBT2 and IGBT4 will be damaged and breakdown after module verification failure, and form a flow channel for system current. When selecting the clamping threshold according to the present invention, it is necessary to ensure that the difference betwee...

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Abstract

The invention relates to a power module fault protection circuit. The power module fault protection circuit includes a clamp circuit, wherein the clamp circuit is connected between a power device driving circuit and power devices, among the multiple power devices, a selected portion of the power devices is self-destructive power devices when a power module has no bypass or a bypass device is in aserious fault, and the rest is unselected power devices; the clamp circuit is arranged between the self-destructive power devices and the power device driving circuit thereof, and the clamp circuit isnot arranged between the unselected power devices and a power device driving circuit thereof; or the clamp circuit is arranged between the self-destructive power devices and the unselected power devices and the power device driving circuits thereof, and a set threshold of the clamp circuit of the self-destructive power devices is lower than a set threshold of the clamp circuit of the unselected power devices. The power module fault protection circuit is advantaged in that when the power module is in fault and the bypass device fails, system safety is guaranteed at low cost, and capacitor short circuit, internal arc and explosion of the power module are avoided.

Description

technical field [0001] The invention relates to the technical field of power module protection, in particular to a power module fault protection circuit. Background technique [0002] The power of the converter valve of the flexible DC transmission, the cascaded reactive power compensation device, the cascaded active filter device, the inverter unit of the cascaded high-voltage frequency conversion device, and the chopper unit of the cascaded DC power supply device are all controlled by The modular multi-level structure composed of controllable power devices, but the power module of the modular multi-level structure includes a large-capacity DC capacitor, which stores a large amount of energy. When the power module fails during system operation, if the power The failure of the bypass device of the module itself cannot protect the faulty module, and the DC capacitor voltage of the faulty module will continue to rise until it exceeds the withstand voltage threshold of the semi...

Claims

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Application Information

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IPC IPC(8): H02H7/12H02M1/32H02M1/088
CPCH02H7/1206H02M1/32H02M1/088
Inventor 易荣张海涛胡雨龙翁海清任成林鲁挺周竞宇余琼刘春权
Owner CSG EHV POWER TRANSMISSION