Sensing memory cell

Abstract

Devices and methods for sensing a memory cell are described. The memory cell may include a ferroelectric memory cell. During a read operation, a cascode may couple a precharged capacitor with the memory cell to transfer a charge between the precharged capacitor and the memory cell. The cascode may isolate the capacitor from the memory cell based on the charge transferred between the capacitor andthe memory cell. A second capacitor (e.g., a parasitic capacitor) may continue to provide an additional amount of charge to the memory cell during the read operation. Such a change in capacitance value during the read operation may provide a large sense window due to a non-linear voltage characteristics associated with the change in capacitance value.

Description

[0001] cross reference [0002] This patent application claims priority to U.S. Patent Application Serial No. 15 / 962,941, filed April 25, 2018, by Di Vincenzo, entitled "SENSING A MEMORY CELL," Said US patent application is assigned to the present assignee and is expressly incorporated herein by reference in its entirety. technical field [0003] The technical field relates to sensing memory cells. Background technique [0004] The following relates generally to operating memory arrays, and more specifically to sensing memory cells. [0005] Memory devices are widely used to store information in a variety of electronic devices such as computers, wireless communication devices, cameras, digital displays, and the like. Information is stored by programming different states of the memory device. For example, a binary device has two states, usually designated as a logic "1" or a logic "0." In other systems, more than two states may be stored. To access stored information, c...

AI Technical Summary

Problems solved by technology

FeRAM can use a device architecture similar to volatile memory, but can have non-volatile properties due to the use of ferroelectric capacitors as storage devices

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