Detection structure and method for metal filling defects
A technology of metal filling and detection structure, which is applied in measurement devices, semiconductor/solid-state device testing/measurement, instruments, etc., and can solve problems such as ineffective metal filling defect monitoring
Active Publication Date: 2019-11-15
SHANGHAI HUALI MICROELECTRONICS CORP
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[0004] The purpose of the present invention is to provide a detection structure and method for metal filling defects, so as to solve the problem that online defect scanning cannot effectively monitor metal filling defects at the bottom of contact holes
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[0031] The structure and method for detecting metal filling defects proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In addition, the structures shown in the drawings are often a part of the actual structure. In particular, each drawing needs to display different emphases, and sometimes uses different scales.
[0032] The present invention provides a detection structure for metal filling defects, referring to figure 1 with figure 2 , figure 1 It is a schematic front view of the detection structure of the metal filling defect according to the embodiment of ...
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The invention provides a detection structure for metal filling defects, which comprises a substrate, a first polycrystalline silicon layer, a first metal layer, a second metal layer, a second polycrystalline silicon layer, a third metal layer and a fourth metal layer, wherein the substrate includes a contrast area, a monitoring area and a peripheral area, and a first contact hole and a second contact hole are formed in the first polycrystalline silicon layer; a third contact hole and a fourth contact hole are formed in the second polycrystalline silicon layer, the first contact hole, the firstmetal layer, the third contact hole and the third metal layer are electrically connected and positioned in the contrast area, and the third contact hole, the second metal layer, the fourth contact hole and the fourth metal layer are electrically connected and positioned in the monitoring area and / or the peripheral area. The detection structure can be used for monitoring the metal filling defectsat the bottom of the second contact hole and the bottom of the fourth contact hole online, so that the metal filling defects at the bottom of the contact holes can be effectively monitored in batch production.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a detection structure and method for metal filling defects. Background technique [0002] With the development of integrated circuit technology, the size of semiconductor process devices continues to shrink, and more and more semiconductor back-end graphics processes use Damascus technology. Under this process condition, the etching and filling of contact holes are often the key factors that restrict the health of semiconductor processes. . [0003] If the photolithography process and etching process are unstable, the key dimensions of the contact hole will change. When the size is small enough, the metal filling of the contact hole will become a technical bottleneck. Combined with the filling process window and machine conditions, it is often easy to produce contact holes. The defect problem of insufficient metal filling, which is usually at the bottom of th...
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IPC IPC(8): H01L23/544H01L21/66G01N27/00
CPCG01N27/00H01L22/12H01L22/32H01L22/34
Inventor 黄莉晶
Owner SHANGHAI HUALI MICROELECTRONICS CORP