A Narrow Linewidth Tunable Laser
A technology for tuning lasers and lasers, which is applied to lasers, semiconductor lasers, devices for controlling laser output parameters, etc., can solve problems such as laser broadening, reduce insertion loss, reduce return loss, and stabilize laser output linewidth Effect
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Embodiment 1
[0053] like Figure 4 As shown, this example illustrates the construction of a narrow linewidth tunable laser:
[0054] In the figure, 301, 314, 315 are detectors; 302 is an etalon; 303, 310 are beam splitters; 304, 309, 312 are focusing lenses; 305, 308 are semiconductor optical amplifiers; 306 is a silicon-based external cavity of a laser; 307 311 is an optical isolator; 313 is an optical fiber.
[0055] This embodiment is an integration scheme of the silicon-based external cavity 306 of the laser and the silicon-based transceiver chip 307, which controls the reflection and transmission of the semiconductor optical amplifier 305 and the silicon-based external cavity 306 of the laser, and realizes the output of the laser waveguide on the right side of the silicon-based external cavity 306 of the laser. , since the optical cavity is fabricated on silicon, it can be designed at the same time as the silicon optical chip. In this embodiment, the laser output from the silicon-ba...
Embodiment 2
[0061] like Figure 5 As shown, this example illustrates the construction of a narrow linewidth tunable laser:
[0062] In the figure, 405, 408 are semiconductor optical amplifiers; 406 are silicon-based external cavities of lasers; 403, 410 are beam splitters; 402 are etalons; 401, 414, 415 are detectors; 404, 409, 412 are focusing lenses; 407 411 is an optical isolator; 413 is an optical fiber.
[0063] In this embodiment, the laser output from the silicon-based external cavity 406 of the laser passes through the coupling beam splitter 303 , part of it is used for wavelength locking detection, and the other part enters the silicon-based transceiver chip 407 . Due to the characteristics of large insertion loss and small reflection of the silicon-based transceiver chip 407, the laser is less affected by the return loss, and the output laser can be maintained at a narrow linewidth. The output signal of the silicon-based transceiver chip 407 is amplified by the semiconductor o...
Embodiment 3
[0067] like Image 6 As shown, this example illustrates the construction of a narrow linewidth tunable laser:
[0068] In the figure, 501, 514, 515 are detectors; 502 is an etalon; 503, 510 are beam splitters; 504, 509, 512 are focusing lenses; 505, 508 are semiconductor optical amplifiers; 506 is a laser silicon-based external cavity; 507 511 is an optical isolator; 513 is an optical fiber.
[0069] This embodiment is a design scheme of a tunable laser. Control the reflectivity and transmittance on both sides of the semiconductor optical amplifier 505 and the laser silicon-based external cavity 506 to realize the waveguide light on the right side of the laser silicon-based external cavity 506. By designing the shape of the waveguide to control the output mode spot, the outgoing laser can be directly coupled Entering the EAM507, the light modulated by the EAM507 is then amplified by the semiconductor optical amplifier 508. Also due to the large loss of the internal componen...
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