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A Narrow Linewidth Tunable Laser

A technology for tuning lasers and lasers, which is applied to lasers, semiconductor lasers, devices for controlling laser output parameters, etc., can solve problems such as laser broadening, reduce insertion loss, reduce return loss, and stabilize laser output linewidth Effect

Active Publication Date: 2021-03-02
ZHONGXING PHOTONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Silicon-based external cavity narrow-linewidth tunable laser, in order to increase the output laser power, uses a semiconductor optical amplifier to amplify the laser, but due to the reflection at the end face of the semiconductor optical amplifier, and the reflected light will continue to be amplified and coupled when it propagates backwards Entering the laser cavity will broaden the laser linewidth

Method used

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  • A Narrow Linewidth Tunable Laser
  • A Narrow Linewidth Tunable Laser
  • A Narrow Linewidth Tunable Laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] like Figure 4 As shown, this example illustrates the construction of a narrow linewidth tunable laser:

[0054] In the figure, 301, 314, 315 are detectors; 302 is an etalon; 303, 310 are beam splitters; 304, 309, 312 are focusing lenses; 305, 308 are semiconductor optical amplifiers; 306 is a silicon-based external cavity of a laser; 307 311 is an optical isolator; 313 is an optical fiber.

[0055] This embodiment is an integration scheme of the silicon-based external cavity 306 of the laser and the silicon-based transceiver chip 307, which controls the reflection and transmission of the semiconductor optical amplifier 305 and the silicon-based external cavity 306 of the laser, and realizes the output of the laser waveguide on the right side of the silicon-based external cavity 306 of the laser. , since the optical cavity is fabricated on silicon, it can be designed at the same time as the silicon optical chip. In this embodiment, the laser output from the silicon-ba...

Embodiment 2

[0061] like Figure 5 As shown, this example illustrates the construction of a narrow linewidth tunable laser:

[0062] In the figure, 405, 408 are semiconductor optical amplifiers; 406 are silicon-based external cavities of lasers; 403, 410 are beam splitters; 402 are etalons; 401, 414, 415 are detectors; 404, 409, 412 are focusing lenses; 407 411 is an optical isolator; 413 is an optical fiber.

[0063] In this embodiment, the laser output from the silicon-based external cavity 406 of the laser passes through the coupling beam splitter 303 , part of it is used for wavelength locking detection, and the other part enters the silicon-based transceiver chip 407 . Due to the characteristics of large insertion loss and small reflection of the silicon-based transceiver chip 407, the laser is less affected by the return loss, and the output laser can be maintained at a narrow linewidth. The output signal of the silicon-based transceiver chip 407 is amplified by the semiconductor o...

Embodiment 3

[0067] like Image 6 As shown, this example illustrates the construction of a narrow linewidth tunable laser:

[0068] In the figure, 501, 514, 515 are detectors; 502 is an etalon; 503, 510 are beam splitters; 504, 509, 512 are focusing lenses; 505, 508 are semiconductor optical amplifiers; 506 is a laser silicon-based external cavity; 507 511 is an optical isolator; 513 is an optical fiber.

[0069] This embodiment is a design scheme of a tunable laser. Control the reflectivity and transmittance on both sides of the semiconductor optical amplifier 505 and the laser silicon-based external cavity 506 to realize the waveguide light on the right side of the laser silicon-based external cavity 506. By designing the shape of the waveguide to control the output mode spot, the outgoing laser can be directly coupled Entering the EAM507, the light modulated by the EAM507 is then amplified by the semiconductor optical amplifier 508. Also due to the large loss of the internal componen...

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Abstract

The application presents a narrow-line-width tunable laser, which relates to the technical field of tunable lasers. The laser includes a wavelength locking device, a first semiconductor optical amplifier, a laser silicon-based external cavity, a communication optical chip, a second semiconductor optical amplifier and an optical fiber coupling output device. A light beam generated by laser silicon-based external cavity passes through the first semiconductor optical amplifier and is then reflected back to the laser silicon-based external cavity to form light beam oscillation. The wavelength of the light beam generated by the laser silicon-based external cavity is locked by the wavelength locking device. The light beam with wavelength locked is output to the second semiconductor optical amplifier via the communication optical chip, amplified by the second semiconductor optical amplifier and then output by the optical fiber coupling output device. The line width of laser light can be controlled at a small value.

Description

technical field [0001] The invention relates to the technical field of tunable lasers, in particular to a narrow linewidth tunable laser. Background technique [0002] As one of the four core components of coherent communication optical modules, tunable lasers are irreplaceable, and their performance, cost, and integration have a crucial impact on coherent optical modules. At present, in the field of silicon optical coherent optical communication, the line width of signal light is required to be less than 100KHz; and due to the large insertion loss of silicon optical chips, the input optical power of signal light is required to reach about 18dBm. [0003] The design principle of narrow linewidth tunable laser is as follows: figure 1 shown. Wherein 101,114 are feedback detectors; 102 are etalons; 103 are beam splitters; 104 are mirrors; 105,106 are filters; 107,109 are focusing lenses; 108 are gain materials; 110 are optical isolators; 111 is the output optical fiber; 112,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/06H01S5/14G02B6/42H04B10/40
CPCG02B6/4204G02B6/4208H01S5/06H01S5/0601H01S5/14H04B10/40
Inventor 周扬李蒙邵永波
Owner ZHONGXING PHOTONICS TECH CO LTD