Line structure etching method, device, system and equipment
A line structure and etching device technology, applied in welding equipment, laser welding equipment, metal processing equipment, etc., to achieve a large technical milestone, huge economic value, and stable line width
Pending Publication Date: 2020-05-22
武汉铱科赛科技有限公司
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Problems solved by technology
[0003] The technical problem to be solved by the present invention is to provide a circuit structure etching method, device, system and equipment to solve the problem of stable production of nanometer-level circuit patterns, or efficient batch production of submicron and micron-level circuit patterns
Method used
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[0031] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0032] Such as figure 1 Shown, a kind of circuit structure etching method comprises the following steps,
[0033] Shooting the first energy beam and the second energy beam to the surface of the workpiece to be processed, and correspondingly forming separated first focused energy spots and second focused energy spots on the surface of the workpiece to be processed; wherein, the first focused energy a spot and said second focused energy spot constitute a combined energy spot;
[0034] By controlling the first energy beam and the second energy beam, the combined energy spot formed by the first focused energy spot and the second focused energy spot is moved and processed on the surface of the workpiece to be processed,...
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The invention relates to the technical field of energy beam processing, in particular to line structure etching method, device, system and equipment. The method includes the following steps that a first energy beam and a second energy beam are emitted to a to-be-processed workpiece surface, and a first focused energy spot and a second focused energy spot which are separated from each other are formed; the first focused energy spot and the second focused energy spot form a combined energy spot; and the combined energy spot moves and performs processing, the component, perpendicular to the movement direction of the combined energy spot, of the center distance between the first focused energy spot and the second focused energy spot is the preset value and is larger than half of the effectivediameter sum of the first focused energy spot and the second focused energy spot, and a line pattern is formed in the area, which is not processed, between the first focused energy spot and the secondfocused energy spot. According to the line structure etching method, device, system and equipment, a microscopic fine line is realized by the aid of the focused energy spots in the macroscopic size,the etching line width limit and stability of traditional focused energy spots are broken through, and micron-order and even nanosecond-order line etching processing is realized easily.
Description
technical field [0001] The invention relates to the technical field of energy beam processing, in particular to a circuit structure etching method, device, system and equipment. Background technique [0002] At present, the energy beam fine processing of fine structure graphics is obtained by repeated scanning of a single energy beam, including laser etching of touch screen lines, direct writing lithography of wafers, direct laser production of circuit boards, etc.; The area between the laser scan and the next scan is reserved to form a conductive line. Due to the accuracy and instability of laser scanning, the line width uniformity of the line will be limited, and the line width limit will be limited. For nanometer line width, sub Micron line width, even line width and line spacing within 10 microns, is very difficult. Either the accuracy of line width and line spacing meets the requirements, but the processing efficiency is too low to meet the scale stable production, or t...
Claims
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Patent Timeline
Login to View More IPC IPC(8): B23K26/06B23K26/362B23K26/70
CPCB23K26/0604B23K26/362B23K26/702
Inventor 张立国
Owner 武汉铱科赛科技有限公司