MOSFET, method of manufacturing MOSFET and power conversion circuit
A gate electrode and area technology, applied in the field of power conversion circuits, can solve the problems of MOSFET vibration and vibration, and achieve the effects of reducing recovery loss, speeding up switching speed, and reducing reverse recovery electrical load.
Active Publication Date: 2019-11-15
SHINDENGEN ELECTRIC MFG CO LTD
View PDF8 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
That is to say, there is a problem that vibration is easily generated in a MOSFET with a superjunction structure, and there is a problem that vibration is more likely to occur in a MOSFET with lattice defects (such as a MOSFET like the conventional MOSFET900)
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment approach
[0054] 1. Configuration of the power conversion circuit 1
[0055] First, the power conversion circuit 1 in the embodiment will be described.
[0056] The power conversion circuit 1 in the embodiment is a chopper circuit (step-up chopper circuit) including components such as a DC-DC converter and a transformer. The power conversion circuit 1 in the embodiment, such as figure 1 The shown equipment includes: a MOSFET 100 for passing a forward current through a body diode; a switching element 200 ; an inductive load (reactor) 300 ; a power supply 400 ; A load 600 is connected to an external terminal of the power conversion circuit 1 .
[0057] The MOSFET 100 in the power conversion circuit 1 is the MOSFET 100 in the embodiment described later. The MOSFET 100 performs rectification operation of the current supplied from the power supply 400 to the inductive load 300 when no voltage is applied to the gate electrode 122 (described later) (in the off state). That is, the MOSFET ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
Provided is a MOSFET 100 which includes: a semiconductor base substrate 110 having an n-type column region 113 and a p-type column region 116, the n-type column region 113 and the p-type column region115 forming a super junction structure; and a gate electrode 122 formed by way of a gate insulation film 120, wherein assuming a region of the semiconductor base substrate 110 which provides a main operation of the MOSFET as an active region A1, a region of the semiconductor base substrate 110 maintaining a withstand voltage of the MOSFET as an outer peripheral region A3, and a region of the semiconductor base substrate 110 disposed between the active region A1 and the outer peripheral region A3 as an active connecting region A2, out of the active regionA1 , the active connecting region A2, and the outer peripheral region A3 of the semiconductor base substrate 110, the crystal defects are formed only in the active region A1 and the active connecting region A2. Also provided are a method of manufacturing the MOSFET 100 and a power conversion circuit which includes the MOSFET 100. The MOSFET 100 according to the present invention can reduce a recovery loss, and generates a small amountof oscillations compared to conventional MOSFETs.
Description
technical field [0001] The present invention relates to a MOSFET, a method of manufacturing the MOSFET, and a power conversion circuit. Background technique [0002] Conventionally, it has been generally known that a MOSFET using a super junction (Super Junction) structure has lattice defects (for example, refer to Patent Document 1). [0003] Therefore, MOSFET 900 shown below will be exemplified and described as a conventional MOSFET. Among them, MOSFET 900 is used to illustrate lattice defects, so in the following description, it does not mean that it is essentially a specific structure of MOSFET 900 (for example, whether it is a trench gate type, whether it has a metal plug or not) Wait). [0004] Conventional MOSFET900 such as Figure 14 As shown, it has: a semiconductor substrate 910 having an n-type columnar region 913 and a p-type columnar region 915, and a super junction structure is formed in the n-type columnar region 913 and the p-type columnar region 915; and a...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/06
CPCH02M3/155H01L29/7811H01L29/0634H01L29/32H01L29/66734H01L29/66727H01L21/26506H01L21/263H01L29/7813
Inventor 新井大辅北田瑞枝浅田毅铃木教章村上晃一
Owner SHINDENGEN ELECTRIC MFG CO LTD